Two-dimensional device simulator for gate level characterization

Abstract A novel device simulator using a Newton-Raphson method for searching for the output terminal potential has been developed for composite structures with inverter function. We have found it impossible to determine the output potential and to characterize the transfer curve for such devices using conventional device simulators. The present simulator, however, can handle gate level device simulation, such as an inverter with a linear or a nonlinear load, and a CMOS inverter. Consequently, an inverter can be characterized exactly in steady and transient operation without circuit simulation. Thus device design with use of the present device simulator becomes more efficient. Specific examples are given to illustrate some comprehensive features of this simulator.