CdTe junction phenomena

Abstract Five main areas of research on CdTe junction phenomena are reviewed in this paper: (1) the effect of surface etching and stoichiometry on the properties of Schottky barriers and heterojunctions with CdS and indium tin oxide (ITO) formed on p-type CdTe crystal; (2) the major junction transport models applicable to CdS/CdTe, CdS/ZnCdTe, ZnO/CdTe and ITO/CdTe junctions; (3) the deposition and control of the properties of p-type CdTe films using close-spaced vapor transport and the characteristics of CdS/CdTe junctions prepared with these films; (4) the successful doping of p-type CdTe films during growth by ion-beam doping methods; and (5) methods of preparing low-resistivity contacts to p-CdTe.

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