A broadband heterostructure barrier varactor tripler source

We present the first demonstration of a broadband Heterostructure Barrier Varactor tripler, designed to cover a major part of the WR-8 waveguide band. The source comprises a waveguide housing, a six-barrier InP-HBV diode flip-chip mounted on an AlN microstrip filter circuit. The conversion loss 3-dB bandwidth was measured to 17 % at a center frequency of 112 GHz. The maximum output power was more than 15 mW for an input power of 300 mW. There are no mechanical tuners or DC-bias, which simplifies assembly and allows for ultra-compact design.

[1]  M. Ingvarson,et al.  An electro-thermal HBV model , 2005, IEEE MTT-S International Microwave Symposium Digest, 2005..

[2]  Jan Stake,et al.  Heterostructure-barrier-varactor design , 2000 .

[3]  Anders Rydberg,et al.  Quantum-Barrier-Varactor Diodes for High-Efficiency Millimetre-Wave Multipliers , 1989 .

[4]  R.M. Weikle,et al.  Opening the terahertz window with integrated diode circuits , 2005, IEEE Journal of Solid-State Circuits.

[5]  W. Marsden.  I and J , 2012 .

[6]  Jan Stake,et al.  A distributed heterostructure barrier varactor frequency tripler , 2000 .

[7]  A 300-GHz heterostructure barrier varactor (HBV) frequency septupler , 2005, 2005 Joint 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics.

[8]  Antti V. Räisänen,et al.  Frequency multipliers for millimeter and submillimeter wavelengths , 1992, Proc. IEEE.

[9]  John B. Shoven,et al.  I , Edinburgh Medical and Surgical Journal.

[10]  R. Weikle,et al.  A 5 mW and 5% efficiency 210 GHz InP-based heterostructure barrier varactor quintupler , 2004, IEEE Microwave and Wireless Components Letters.

[11]  Bascom S. Deaver,et al.  High-Efficiency Heterostructure-Barrier-Varactor Frequency Triplers Using AlN Substrates , 2005, IEEE MTT-S International Microwave Symposium Digest, 2005..

[12]  Jan Stake,et al.  Analysis of Symmetric Varactor Frequency Multipliers , 1997 .

[13]  A. Uhlir.  The Potential of Semiconductor Diodes in High-Frequency Communications , 1958, Proceedings of the IRE.

[14]  A.L. Sailer,et al.  A high-power W-band quasi-optical frequency tripler , 2003, IEEE MTT-S International Microwave Symposium Digest, 2003.

[15]  P. Siegel.  Terahertz Technology , 2001 .

[16]  Kevin Barraclough,et al.  I and i , 2001, BMJ : British Medical Journal.

[17]  Jan Stake,et al.  Effects of self-heating on planar heterostructure barrier varactor diodes , 1998 .

[18]  H.B. Wallace,et al.  Standoff Detection of Weapons and Contraband in the 100 GHz to 1 THz Region , 2007, IEEE Transactions on Antennas and Propagation.

[19]  M. Ingvarson,et al.  Thermal constraints for heterostructure barrier varactors , 2004, IEEE Electron Device Letters.

[20]  P. Mounaix,et al.  Monolithic integrated circuits incorporating InP-based heterostructure barrier varactors , 2002, IEEE Microwave and Wireless Components Letters.

[21]  M. Sadeghi,et al.  A 0.2-W Heterostructure Barrier Varactor Frequency Tripler at 113 GHz , 2007, IEEE Electron Device Letters.

[22]  D. Neikirk,et al.  High breakdown voltage AlAs/InGaAs quantum barrier varactor diodes , 1993 .