论文信息 - Alternate explanation of 1f noise in ion-implanted MOSFETs

Alternate explanation of 1f noise in ion-implanted MOSFETs

Abstract 1 f noise in ion-implanted MOSFETs is not explained in terms of mobility fluctuation noise but as number fluctuation noise governed by a transition from surface channel flow at low drain bias to buried channel flow near the drain at elevated drain bias.

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