论文信息 - Very low threshold buried heterostructure quantum well lasers by laser‐assisted disordering

Very low threshold buried heterostructure quantum well lasers by laser‐assisted disordering

Data are presented on high‐quality buried heterostructure lasers fabricated by laser‐assisted disordering of GaAs‐AlGaAs quantum well heterostructures. The typical cw threshold current is 4 mA and the maximum power output is 27 mW. The devices exhibit single fundamental mode operation with 34 dB attenuation of longitudinal side modes.

J. Epler | R. Thornton | T. Paoli

[1] R. Burnham,et al. Low‐threshold disorder‐defined buried‐heterostructure AlGaAs diode lasers by anisotropic diffusion of laser‐incorporated Si , 1987 .

[2] R. Burnham,et al. Low threshold buried heterostructure quantum well diode lasers by laser‐assisted disordering , 1987 .

[3] Thomas L. Paoli,et al. Laser induced disordering of GaAs‐AlGaAs superlattice and incorporation of Si impurity , 1986 .

[4] D. Scifres,et al. Low threshold, high efficiency Ga1−xAlxAs single quantum well visible diode lasers grown by metalorganic chemical vapor deposition , 1982 .

[5] Karl Hess,et al. Disorder of an AlAs‐GaAs superlattice by impurity diffusion , 1981 .

[6] W. Duley. Laser processing and analysis of materials , 1983 .