Multilevel Programmable Oxide Diode for Cross-Point Memory by Electrical-Pulse-Induced Resistance Change
暂无分享,去创建一个
Chang Jung Kim | Seung-Eon Ahn | Myoung-Jae Lee | Myoung-Jae Lee | Chang Bum Lee | C. J. Kim | B. Kang | S. Ahn | G. Stefanovich | K. Kim | W. Xianyu | Young-soo Park | Youngsoo Park | Bo Soo Kang | G. Stefanovich | Ki Hwan Kim | Wen Xu Xianyu
[1] N. Wu,et al. Evidence for an oxygen diffusion model for the electric pulse induced resistance change effect in transition-metal oxides. , 2006, Physical Review Letters.
[2] S. Forrest,et al. A low switching voltage organic-on-inorganic heterojunction memory element utilizing a conductive polymer fuse on a doped silicon substrate , 2004 .
[3] S.C. Li,et al. 1.8-V nanospeed R/W module for 64-kB cross-point cell magnetic random access memory , 2005, IEEE Transactions on Magnetics.
[4] I. Yoo,et al. 2-stack 1D-1R Cross-point Structure with Oxide Diodes as Switch Elements for High Density Resistance RAM Applications , 2007, 2007 IEEE International Electron Devices Meeting.
[5] I. Baek,et al. Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory , 2008 .
[6] Yu-Sun Park,et al. Defect-induced degradation of rectification properties of aged Pt∕n-InxZn1−xOy Schottky diodes , 2008 .
[7] D. Ielmini,et al. Voltage-Controlled Relaxation Oscillations in Phase-Change Memory Devices , 2008, IEEE Electron Device Letters.
[8] Chris G. Van de Walle,et al. Universal alignment of hydrogen levels in semiconductors, insulators and solutions , 2003, Nature.
[9] I. Baek,et al. Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
[10] H. Morkoç,et al. A COMPREHENSIVE REVIEW OF ZNO MATERIALS AND DEVICES , 2005 .
[11] T. Gessmann,et al. Experimental analysis and a new model for the high ideality factors in GaN-based diodes , 2003, International Semiconductor Device Research Symposium, 2003.
[12] Thomas H. Lee,et al. 512-Mb PROM with a three-dimensional array of diode/antifuse memory cells , 2003 .
[13] I. Baek,et al. High‐Current‐Density CuO x/InZnOx Thin‐Film Diodes for Cross‐Point Memory Applications , 2008 .