Morphology and Work Function of In, Ag, Mg, and Au Nano‐Islands Grown on AlN(0001) Surface
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Bulent Baris | Mohanad Alchaar | S. Gauthier | D. Martrou | M. Ghamnia | F. Chaumeton | Hassan Khoussa
[1] X. Bouju,et al. Stabilization of Au Monatomic-High Islands on the (2×2)−Nad Reconstructed Surface of Wurtzite AlN(0001) , 2017 .
[2] N. Lorente,et al. Noncontact atomic force microscopy and density functional theory studies of the (2*2) reconstructions of the polar AlN(0001) surface , 2016 .
[3] D. Katzer,et al. Electrical characterisation of epitaxial AlN/Nb 2 N heterostructures grown by molecular beam epitaxy , 2016 .
[4] Sangyeob Lee. Surface potential measurements of 2 × 1 reconstructed Si(001) using UHV Kelvin probe force microscopy , 2015 .
[5] S. Gauthier,et al. In-situ NC-AFM measurements of high quality AlN(0001) layers grown at low growth rate on 4H-SiC(0001) and Si(111) substrates using ammonia molecular beam epitaxy , 2015 .
[6] M. Djavid,et al. Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources , 2015, Scientific Reports.
[7] C. Henry,et al. Kelvin Probe Force Microscopy in Surface Chemistry: Reactivity of Pd Nanoparticles on Highly Oriented Pirolytic Graphite , 2014 .
[8] Jiecai Han,et al. AlN films prepared on 6H-SiC substrates under various sputtering pressures by RF reactive magnetron sputtering , 2012 .
[9] K. Hiramatsu,et al. HVPE growth of AlN on trench- patterned 6H-SiC substrates , 2011 .
[10] R. H. Jansen,et al. Investigation of AlN buffer layers on 6H-SiC for AlInN HEMTs grown by MOVPE , 2011 .
[11] K. Sanada,et al. AlN bulk single crystal growth on 6H-SiC substrates by sublimation method , 2010 .
[12] L. Schowalter,et al. Properties of Mid-Ultraviolet Light Emitting Diodes Fabricated from Pseudomorphic Layers on Bulk Aluminum Nitride Substrates , 2010 .
[13] D. V. Dinh,et al. Influence of AlN buffer layer thickness and deposition methods on GaN epitaxial growth , 2009 .
[14] U. Mishra,et al. Growth of high quality N-polar AlN(0001¯) on Si(111) by plasma assisted molecular beam epitaxy , 2009 .
[15] T. Kimoto,et al. Impact of surface step heights of 6H–SiC (0 0 0 1) vicinal substrates in heteroepitaxial growth of 2H–AlN , 2008 .
[16] J. Brault,et al. Layer-by-layer epitaxial growth of Mg on GaN(0001) , 2008 .
[17] Z. Horváth,et al. AlN growth on sapphire substrate by ammonia MBE , 2007 .
[18] R. Rousseau,et al. Metal work-function changes induced by organic adsorbates: a combined experimental and theoretical study. , 2005, Physical review letters.
[19] Qing Yang,et al. Facile solvent-free synthesis of pure-phased AlN nanowhiskers at a low temperature , 2004 .
[20] Chris G. Van de Walle,et al. Universal alignment of hydrogen levels in semiconductors, insulators and solutions , 2003, Nature.
[21] Ratna Naik,et al. Electrical characterization of metal/AlN/Si thin film hydrogen sensors with Pd and Al gates , 2003 .
[22] Jae-Yong Lim,et al. Measurement of Work Function at MgO Crystal Surface by the γ-Focused Ion Beam System , 2002 .
[23] R. Davis,et al. Electrical characteristics of metal/AlN/n‐type 6H–SiC(0001) heterostructures , 1996 .
[24] Göran V. Hansson,et al. Photoemission study of the bulk and surface electronic structure of single crystals of gold , 1978 .
[25] W. Kohn,et al. Theory of Metal Surfaces: Work Function , 1971 .
[26] Xiaodong Wang,et al. Molecular beam epitaxy growth of GaN, AlN and InN , 2004 .
[27] Lynne K. Mills,et al. Rapid Process for Manufacturing Aluminum Nitride Powder , 1994 .