Photoluminescence excitation spectroscopy of erbium-doped silicon-rich silicon oxide

The 1.54 μm Er3+ photoluminescence excitation (PLE) and photoluminescence (PL) spectra of erbium-doped silicon-rich silicon oxide (SRSO) are investigated. Between 350 and 820 nm, PLE spectra are broad and featureless, and the PL spectra are independent of the excitation wavelengths. The results indicate that in erbium-doped SRSO, the Er3+ luminescence is dominated by a single class of Er sites with a strong coupling to all the carriers in the silicon nanograins.

[1]  Optical properties of porous silicon , 1994 .

[2]  John M. Zavada,et al.  PHOTOLUMINESCENCE SPECTROSCOPY OF ERBIUM IMPLANTED GALLIUM NITRIDE , 1997 .

[3]  Room-temperature photoluminescence and electroluminescence from Er-doped silicon-rich silicon oxide , 1997 .

[4]  F. Koch,et al.  The temperature dependence of the absorption coefficient of porous silicon , 1996 .

[5]  Effects of hydrogen plasma treatment on the 1.54 μm luminescence of erbium-doped porous silicon , 1998 .

[6]  A. Taguchi,et al.  Erbium in Si: Estimation of energy transfer rate and trap depth from temperature dependence of intra-4f-shell luminescence , 1998 .

[7]  A. Steckl,et al.  Rare earth doped semiconductors III , 2001 .

[8]  Keiichi Yamamoto,et al.  1.54 μm photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: Evidence for energy transfer from Si nanocrystals to Er3+ , 1997 .

[9]  Anthony J. Kenyon,et al.  OPTICAL-PROPERTIES OF PECVD ERBIUM-DOPED SILICON-RICH SILICA - EVIDENCE FOR ENERGY-TRANSFER BETWEEN SILICON MICROCLUSTERS AND ERBIUM IONS , 1994 .

[10]  Carrier-induced Er3+ luminescence quenching of erbium-doped silicon-rich silicon oxide , 1999 .

[11]  Effect of hydrogenation on room-temperature 1.54 μm Er3+ photoluminescent properties of erbium-doped silicon-rich silicon oxide , 1998 .

[12]  S. G. Bishop,et al.  Excitation mechanisms of multiple Er3+ sites in Er-implanted GaN , 1998 .

[13]  Correlation between visible and infrared (1.54 μm) luminescence from Er‐implanted porous silicon , 1996 .

[14]  M. H. An,et al.  Room‐temperature visible photoluminescence from silicon‐rich oxide layers deposited by an electron cyclotron resonance plasma source , 1996 .

[15]  Allan,et al.  Theoretical aspects of the luminescence of porous silicon. , 1993, Physical review. B, Condensed matter.

[16]  Y. Aoyagi,et al.  Size control of Si nanocrystallites formed in amorphous Si matrix by Er-doping , 1998 .

[17]  H. Bardeleben,et al.  Direct excitation spectroscopy of Er centers in porous silicon , 1997 .

[18]  A. Polman,et al.  Excitation and deexcitation of Er3+ in crystalline silicon , 1997 .

[19]  Se-Young Seo,et al.  Composition dependence of room temperature 1.54 μm Er3+ luminescence from erbium-doped silicon:oxygen thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition , 1998 .

[20]  M. Gauneau,et al.  Optical Activation of Ion Implanted Rare-Earths , 1993 .