A high-responsivity high-bandwidth asymmetric twin-waveguide coupled InGaAs-InP-InAlAs avalanche photodiode

The authors demonstrate an integratable high-responsivity high-bandwidth long wavelength InGaAs-InP-InAlAs avalanche photodiode based on an asymmetric twin-waveguide structure. The device has an external quantum efficiency of 48 /spl plusmn/ 1.5% at /spl lambda/ = 1.55 /spl mu/m, a 3-dB bandwidth of 28.5 /spl plusmn/ 0.5 GHz with gain of up to 4, and a fiber-to-waveguide misalignment tolerance of /spl plusmn/ 1.0 /spl mu/m in the vertical and /spl plusmn/ 1.3 /spl mu/m in the horizontal directions resulting in a 1-dB sensitivity penalty.

[1]  I. Glesk,et al.  Monolithic integration of an all-optical Mach-Zehnder demultiplexer using an asymmetric twin-waveguide structure , 2001, IEEE Photonics Technology Letters.

[2]  J. C. Dries,et al.  Optimization of 10-Gb/s long-wavelength floating guard ring InGaAs-InP avalanche photodiodes , 2002, IEEE Photonics Technology Letters.

[3]  J. P. Praseuth,et al.  Waveguide AlInAs/GaAlInAs avalanche photodiode with a gain-bandwidth product over 160 GHz , 1997 .

[4]  P. Studenkov,et al.  An asymmetric twin-waveguide high-bandwidth photodiode using a lateral taper coupler , 2001, IEEE Photonics Technology Letters.

[5]  Toshitaka Torikai,et al.  10 Gbit/s high sensitivity, low-voltage-operation avalanche photodiodes with thin InAlAs multiplication layer and waveguide structure , 2000 .

[6]  Toshitaka Torikai,et al.  High-speed and high-sensitivity waveguide InAlAs avalanche photodiodes for 10-40 Gb/s receivers , 2001, LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242).

[7]  J.C. Campbell,et al.  Impact ionization characteristics of III-V semiconductors for a wide range of multiplication region thicknesses , 2000, IEEE Journal of Quantum Electronics.

[8]  Stephen R. Forrest,et al.  A 2.0 μm cutoff wavelength separate absorption, charge, and multiplication layer avalanche photodiode using strain-compensated InGaAs quantum wells , 1999 .

[9]  J.C. Campbell,et al.  Waveguide avalanche photodiode operating at 1.55 μm with a gain-bandwidth product of 320 GHz , 2001, IEEE Photonics Technology Letters.

[10]  S. Forrest,et al.  Performance of In 0.53 Ga 0.47 As/InP avalanche photodiodes , 1982 .