High-Efficiency Zn-Diffused GaAs Electroluminescent Diodes
暂无分享,去创建一个
[1] W. Spicer,et al. Quantum Efficiency and Radiative Lifetime in p‐Type Gallium Arsenide , 1965 .
[2] B. Averbach,et al. Studies on Group III-V Intermetallic Compounds , 1957 .
[3] M. S. Abrahams,et al. Etching of Dislocations on the Low‐Index Faces of GaAs , 1965 .
[4] M. Craford,et al. Electroluminescence of Diffused GaAs1 − xPx Diodes with Low Donor Concentrations , 1969 .
[5] J. Marinace,et al. Zinc‐Diffused GaAs Electroluminescent Diodes with Long Operating Life , 1970 .
[6] A. Herzog. Quantum efficiency of GaAs electroluminescent diodes , 1966 .
[7] D. E. Hill. Infrared Transmission and Fluorescence of Doped Gallium Arsenide , 1964 .
[8] J. Grabmaier,et al. Dislocation Etch Pits in Single Crystal GaAs , 1969 .
[9] Bertram Schwartz,et al. Ohmic contacts to semiconductors , 1969 .
[10] A. G. Fischer,et al. Highly Refractive Glasses to lmprove Electroluminescent Diode Efficiencies , 1969 .
[11] W. P. Dumke,et al. Optical Transitions Involving Impurities in Semiconductors , 1963 .
[12] W. N. Carr,et al. ONE‐WATT GaAs p‐n JUNCTION INFRARED SOURCE , 1963 .
[13] G. L. Pearson,et al. Recombination in Plastically Deformed Germanium , 1957 .
[14] D. E. Hill. Internal Quantum Efficiency of GaAs Electroluminescent Diodes , 1965 .
[15] M. S. Abrahams,et al. Detection of Selenium Clustering in GaAs by Transmission Electron Microscopy , 1967 .
[16] M. Craford,et al. GaAs ‐ GaAsP Heterostructure Injection Lasers , 1971 .