On the permanent component profiling of the negative bias temperature instability in p-MOSFET devices

Abstract In this manuscript, we have investigated the negative bias temperature instability (NBTI) induced border-trap ( N bt ) depth in the interfacial oxide region of PMOS transistors using multi-frequency charge pumping (MFCP) method. We emphasize on the distribution of the permanent component in the oxide near the interface, giving a clear insight on its effect on NBTI features. According to the experimental data, the extracted effective dipole moment ( a eff ) and field-independent activation energy ( E a ) have revealed a linear relation with depth distance ( Z ), which consistently explain the variation of n as well as E a , eff often reported in the literature. In fact, a eff and E a increase with the depth, indicating the presence of the precursor defects having different effective dipole moments and activation energies. We suggest that such traps are most likely related to O 3 − x Si x Si–H ( x  = 1 and x  = 2) family defects (or P b center hydrogen complex) located in the interfacial sub-oxide region.

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