Implementation of High Peak-Current IGBT Gate-Drive Circuits in a VLSI Compatible BiCMOS Technology

A BiCMOS integrated gate-drive (IGD) ASIC has been implemented in a 18V, 3-¿m BiCMOS technology for IGBT based intelligent power modules (IPM). It features various monitoring and control functions such as linear dv/dt feedback and master-slave control of IGBTs, and is capable of delivering 16-18A peak current to high capacitive loads. The gate-drive ASIC has also been tested in a high voltage half-bridge module using 1.6kV IGBTs.

[1]  Sam Ochi.  Driving and Protecting Large Die IGBT and MOS Power Devices , 1994 .

[2]  J. Bernstein,et al.  Short-time failure of metal interconnect caused by current pulses , 1993, IEEE Electron Device Letters.

[3]  Peter Zwanziger.  IGBT Applications in Power Converters (II) , 1993 .

[4]  N. Felber,et al.  An IGBT gate drive ASIC with 3 A/12.5 A CMOS output stages , 1995, Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95.

[5]  C. Hu,et al.  An electromigration failure model for interconnects under pulsed and bidirectional current stressing , 1994 .

[6]  Bimal K. Bose,et al.  Power electronics-a technology review , 1992, Proc. IEEE.

[7]  Bimal K. Bose,et al.  Recent advances in power electronics , 1990, [Proceedings] IECON '90: 16th Annual Conference of IEEE Industrial Electronics Society.

[8]  Pekka Kuivalainen,et al.  Circuit simulation models for MOS-gated power devices: application to the simulation of an electronic lamp ballast circuit , 1993, Proceedings Eighth Annual Applied Power Electronics Conference and Exposition,.

[9]  J. Black.  Electromigration failure modes in aluminum metallization for semiconductor devices , 1969 .