Accurate evaluation of fast threshold voltage shift for SiC MOS devices under various gate bias stress conditions
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Hiroshi Yano | Shinsuke Harada | Hajime Okumura | Dai Okamoto | Mitsuru Sometani | Yoshiyuki Yonezawa | Yohei Iwahashi | Mitsuo Okamoto | D. Okamoto | H. Yano | T. Hatakeyama | M. Sometani | S. Harada | H. Okumura | Y. Yonezawa | M. Okamoto | Tetsuo Hatakeyama | Mariko Hayashi | M. Hayashi | Y. Iwahashi
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