Magnetoelectric response of AlN/[(Fe90Co10)78Si12B10 + Terfenol-D] composite films

The magnetoelectric (ME) composite films composed of piezoelectric layer AlN film and new magnetostrictive layer [(Fe90Co10)78Si12B10 + Terfenol-D] films were successfully prepared by RF magnetron sputtering. The influence of bias magnetic field Hdc on ME response, as well as, the ac magnetic field sensitivity were investigated in detail. The results demonstrated that the respective magnetic properties of (Fe90Co10)78Si12B10 and Terfenol-D films are coupled in this new magnetostrictive layer, resulting in the fact that ME voltage coefficient αME reaches the maximum of 78.1 V/cm Oe and 77.5 V/cm Oe at the bias field of 11 Oe and 96 Oe, respectively. Meanwhile, the composite films display ac magnetic field sensitivity of 0.45 nT/√Hz and 0.47 nT/√Hz at Hdc of 11 Oe and 96 Oe, respectively. The results above indicate that the AlN/[(Fe90Co10)78Si12B10 + Terfenol-D] composite films exhibit a promising potential application in diverse range of magnetic field detection.

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