Epitaxial graphene top-gate FETs on silicon substrates

Graphene has a potential of extreme carrier mobility for both electrons and holes [1–4]. Therefore it is considered as a channel material of next-generation FETs. For this purpose, we study an epitaxial graphene on Si substrates [5,6] and applied it to backgate FETs [7]. In this paper, we report top-gate epitaxial graphene FETs (EGFETs) on Si substrates.

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