论文信息 - Effects of Ultrathin AlAs Interfacial Layer on Photoluminescence Properties of GaInP Epilayer Grown on Ge - 字舞流文

Effects of Ultrathin AlAs Interfacial Layer on Photoluminescence Properties of GaInP Epilayer Grown on Ge

L. Bian | Jiayuan Chen | H. Yang | W. He | S. Jia | D. Jiang | Shuangzan Lu | J. Chen | D. Jiang | S. Lu