Study of tungsten and WSi refractory ohmic contacts to graded-gap InGaAs/GaAs/AlGaAs heterostructures

[1]  F. Ren,et al.  Thermal stability of tungsten ohmic contacts to the graded‐gap InGaAs/GaAs/AlGaAs heterostructure , 1989 .

[2]  C. S. Wu,et al.  WSix refractory metallization for GaAs metal–semiconductor field‐effect transistors , 1988 .

[3]  G. Taylor,et al.  A p-channel BICFET in the InGaAs/InAlAs material system , 1988, IEEE Electron Device Letters.

[4]  Osaake Nakajima,et al.  Self-aligned AlGaAs/GaAs HBT with low emitter resistance utilizing InGaAs cap layer , 1988 .

[5]  K. Eda,et al.  AlGaAs/GaAs heterojunction bipolar transistors with small size fabricated by a multiple self-alignment process using one mask , 1987, IEEE Transactions on Electron Devices.

[6]  T. Ishibashi,et al.  High-performance AlGaAs/GaAs HBT's utilizing proton-implanted buried layers and highly doped base layers , 1987, IEEE Transactions on Electron Devices.

[7]  S. Tiwari,et al.  Symmetric-gain, zero-offset, self-aligned, and refractory-contact double HBT's , 1987, IEEE Electron Device Letters.

[8]  H. Kroemer,et al.  An (Al,Ga)As/GaAs heterostructure bipolar transistor with nonalloyed graded-gap ohmic contacts to the base and emitter , 1987, IEEE Electron Device Letters.

[9]  D.L. Miller,et al.  AlGaAs/GaAs heterojunction bipolar transistors fabricated using a self-aligned dual-lift-off process , 1987, IEEE Electron Device Letters.

[10]  S. Tiwari,et al.  In situ contacts to GaAs based on InAs , 1986 .

[11]  O. Nakajima,et al.  Extremely Low Resistance Non-Alloyed Ohmic Contacts to n-GaAs Using Compositionally Graded InxGa1-xAs Layers , 1986 .

[12]  T. Jackson,et al.  Ohmic contacts to n‐GaAs using graded band gap layers of Ga1−xInxAs grown by molecular beam epitaxy , 1981 .

[13]  H. H. Berger,et al.  Contact Resistance and Contact Resistivity , 1972 .

[14]  Horst H. Berger,et al.  Models for contacts to planar devices , 1972 .