Line-edge roughness increase due to wiggling enhanced by initial pattern waviness
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[1] J. Moon,et al. Sub-0.1 μm nitride hard mask open process without precuring the ArF photoresist , 2003 .
[2] David Cox,et al. Thermal expansion coefficient of hydrogenated amorphous carbon , 2003 .
[3] McKenzie,et al. Compressive-stress-induced formation of thin-film tetrahedral amorphous carbon. , 1991, Physical review letters.
[4] Jin-Woong Kim,et al. Etch challenges for 1xnm NAND flash , 2012, Advanced Lithography.
[5] B. Tay,et al. Properties of carbon ion deposited tetrahedral amorphous carbon films as a function of ion energy , 1996 .
[6] Donggyu Yim,et al. Application of DBM system to overlay verification and wiggling quantification for advanced process , 2012, Advanced Lithography.
[7] Seiichi Kondo,et al. Reduction effect of line edge roughness on time-dependent dielectric breakdown lifetime of Cu/low-k interconnects by using CF3I etching , 2009 .
[8] Douglas N. Arnold,et al. On the Range of Applicability of the Reissner–Mindlin and Kirchhoff–Love Plate Bending Models , 2002 .
[9] Satoru Shimura,et al. High-etching selectivity of spin-on-carbon hard mask process for 22nm node and beyond , 2012, Other Conferences.
[10] Byung-Gook Park,et al. New program inhibition scheme for high boosting efficiency in three-dimensional NAND array , 2014 .
[11] N. Negishi,et al. Deposition control for reduction of 193 nm photoresist degradation in dielectric etching , 2005 .
[12] Atsuko Yamaguchi,et al. Characterization of line-edge roughness in resist patterns and estimations of its effect on device performance , 2003, SPIE Advanced Lithography.
[13] B. Bhushan,et al. Micromechanical properties of amorphous carbon coatings deposited by different deposition techniques , 1995 .
[14] Sylvain Maitrejean,et al. Undulation of sub-100nm porous dielectric structures: A mechanical analysis , 2007 .
[15] T. Ohiwa,et al. Sub-55 nm Etch Process Using Stacked-Mask Process , 2007 .
[16] Chun-Chi Chen,et al. Pattern wiggling investigation of self-aligned double patterning for 2x nm node NAND Flash and beyond , 2013, Advanced Lithography.
[17] N. Possémé,et al. Patterning of porous SiOCH using an organic mask: Comparison with a metallic masking strategy , 2010 .