Theoretical analysis of edge parasitic transistor effects in mesa-isolated fully-depleted SOI NMOS devices

Using a quasi-two-dimensional analysis, we derived an analytical expression for the sidewall surface potential in a mesa-isolated fully-depleted SOI NMOSFET. The results were compared with two-dimensional numerical device simulation. A comprehensive investigation of edge parasitic transistor effects in the mesaisolated fully-depleted SOI NMOS devices was made. It is found that device technological parameters must be carefully optimized to eliminate the edge effects.