Unified Regional Surface Potential for Modeling Common-Gate Symmetric/Asymmetric Double-Gate MOSFETs with Quantum-Mechanical Effects

Technology scaling has caused the MOSFET device to enter into a regime in which the quantum mechanical effect (QME) cannot be ignored. Besides, double-gate (DG) MOSFET is considered as one of the potential devices that may be replacing the bulk-MOSFET as the next generation transistor. However, there is no simple solution even without considering the quantum-mechanical correction for DG MOSFET compact model. In this work, the explicit surface potential for common-gate asymmetric double-gate (ca-DG) MOSFET model is extended to include QME. The model is physically derived and verified with Medici simulation data for all the essential physical conditions. It matches well with the numerical data. The potential models are ready to be applied to the drain current model as it contains the essential physics that scales with the DG MOSFET structures. Index Terms—Compact model, quantum mechanical effect, double-gate, unified regional surface potential.

[1]  Xing Zhou,et al.  Rigorous Surface-Potential Solution for Undoped Symmetric Double-Gate MOSFETs Considering Both Electrons and Holes at Quasi NonEquilibrium , 2008, IEEE Transactions on Electron Devices.

[2]  G. Gildenblat,et al.  Closed-form approximation for the perturbation of MOSFET surface potential by quantum-mechanical effects , 2000 .

[3]  Chenming Hu,et al.  Modeling Advanced FET Technology in a Compact Model , 2006, IEEE Transactions on Electron Devices.

[4]  J. V. Faricelli,et al.  A physical compact MOSFET model, including quantum mechanical effects, for statistical circuit design applications , 1995, Proceedings of International Electron Devices Meeting.

[6]  J.J. Liou,et al.  A Review of Core Compact Models for Undoped Double-Gate SOI MOSFETs , 2007, IEEE Transactions on Electron Devices.

[7]  P. Woerlee,et al.  A simple model for quantisation effects in heavily-doped silicon MOSFETs at inversion conditions , 1994 .

[8]  Don Herbison-Evans,et al.  Solving Quartics and Cubics for Graphics , 1995 .

[9]  Xing Zhou,et al.  Surface-Potential Solution for Generic Undoped MOSFETs With Two Gates , 2007, IEEE Transactions on Electron Devices.

[10]  Y. Taur,et al.  A continuous, analytic drain-current model for DG MOSFETs , 2004 .

[11]  Jean-Pierre Colinge,et al.  Multi-gate SOI MOSFETs , 2007 .

[12]  Wei Wang,et al.  A continuous, analytic drain-current model for DG MOSFETs , 2004, IEEE Electron Device Letters.

[13]  Daniel Mathiot,et al.  Accounting for quantum mechanical effects from accumulation to inversion, in a fully analytical surface-potential-based MOSFET model , 2004 .

[14]  Yoshitaka Tsunashima,et al.  FinFET: the prospective multi-gate device for future SoC applications , 2006 .

[15]  C. Hu,et al.  FinFET-a self-aligned double-gate MOSFET scalable to 20 nm , 2000 .