Electro-thermal simulation of 1200 V 4H-SiC MOSFET short-circuit SOA†

The purpose of this paper is to introduce a dynamic electro-thermal simulation and analysis approach for device design and short-circuit safe-operating-area (SOA) characterization using a physics-based electro-thermal Saber®* model. Model parameter extraction, simulation, and validation results are given for several commercially available 4H-silicon carbide (SiC) power MOSFETs with a voltage rating of 1200 V and with current ratings of 31.6 A and 42 A. The electro-thermal model and simulations are used to analyze the short-circuit SOA including the measured failure time (tfailure) and simulated device internal junction temperature (Tj) at failure for different gate voltages (VGS) and drain voltages (VDS).

[1]  A. Hefner,et al.  Automated Parameter Extraction Software for High-Voltage, High-Frequency SiC Power MOSFETs , 2006, 2006 IEEE Workshops on Computers in Power Electronics.

[2]  T. Funaki,et al.  Short-circuit tests on SiC power MOSFETs , 2013, 2013 IEEE 10th International Conference on Power Electronics and Drive Systems (PEDS).

[3]  David W. Berning,et al.  High-Voltage Isolated Gate Drive Circuit for 10 kV, 100 A SiC MOSFET/JBS Power Modules , 2008, 2008 IEEE Industry Applications Society Annual Meeting.

[4]  Bruno Allard,et al.  Electrothermal modeling of IGBTs: application to short-circuit conditions , 2000 .

[5]  Allen R. Hefner,et al.  A dynamic electro-thermal model for the IGBT , 1992, Conference Record of the 1992 IEEE Industry Applications Society Annual Meeting.

[6]  B. J. Baliga,et al.  Short-circuit capability of 1200V SiC MOSFET and JFET for fault protection , 2013, 2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

[7]  H. Mantooth,et al.  Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence , 2003 .

[8]  Aaas News,et al.  Book Reviews , 1893, Buffalo Medical and Surgical Journal.