Comparison Study of Bulk and SOI CMOS Technologies based Rad-hard ADCs in Space

The electrical and radiation characteristics of the bulk and silicon-on-insulator (SOI) CMOS based rad-hard analog-todigital converters (ADC) in space are compared in this paper. A 10bits monolithic, high reliability pipelined ADC with 25Msps conversion rate is presented as a prototype to exhibit the benefits of radiation hardened by design (RHBD) and radiation hardened by process (RHBP) approaches. The ADC prototype hardened by RHBD is fabricated with 0.35um bulk CMOS technology and radiation hardened SOI CMOS technology with an identical technology node respectively. The experimental results show that the SOI-based ADC achieves the total ionizing dose (TID) tolerance of 300krad(Si), nearly one order of magnitude higher than the bulk ADC, and the single event upset (SEU) cross-section of 9.6E-6cm 2 /device at 63MeV·cm 2 /mg linear energy transfer (LET), lower than the bulk ADC by two orders of magnitude. The SOI-based ADC is also better than the bulk ADC in the electrical characteristics. It is more suitable for harsh radiation environment applications.

[1]  R. Pease,et al.  Total ionizing dose effects in bipolar devices and circuits , 2003 .

[2]  Yuan Yao,et al.  A 12-bit interleaved opamp-sharing pipeline ADC for extreme environment applications , 2010, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.

[3]  D. Binder,et al.  Satellite Anomalies from Galactic Cosmic Rays , 1975, IEEE Transactions on Nuclear Science.

[4]  B. Blalock,et al.  Single-Event Sensitivity and Hardening of a Pipelined Analog-to-Digital Converter , 2006, IEEE Transactions on Nuclear Science.

[5]  O. A. Kalashnikov,et al.  Integrating analog-to-digital converter radiation hardness test technique and results , 1998 .

[6]  G. Borel,et al.  A multi Mrad hardened 8 bit/20 MHz flash ADC , 1991, RADECS 91 First European Conference on Radiation and its Effects on Devices and Systems.

[7]  A 1 . 5V , 10-bit , 14 . 3-MS / s CMOS Pipeline Analog-to-Digital Converter , 1999 .

[8]  Philippe Roche,et al.  Comparison of the sensitivity to heavy ions of 0.25-/spl mu/m bulk and SOI technologies , 2002 .

[9]  Chun-Yen Chang,et al.  Performance Comparison Between Bulk and SOI Junctionless Transistors , 2013, IEEE Electron Device Letters.

[10]  G. Geelen,et al.  A fast-settling CMOS op amp for SC circuits with 90-dB DC gain , 1990 .

[11]  D. Gnani,et al.  Radiation-Tolerant Code-Density Calibration of Nyquist-Rate Analog-to-Digital Converters , 2013, IEEE Transactions on Nuclear Science.

[12]  Lingling Sun,et al.  A sample-and-hold circuit for 10-bit 100MS/s pipelined ADC , 2011, 2011 9th IEEE International Conference on ASIC.