Oxidation of Silicon Carbide

The rate of oxidation of silicon carbide was measured in an atmosphere of dry oxygen between 900° and 1600°C. The rate was studied by using a thermogravimetric apparatus and was found to be diffusion controlled. The products of oxidation were amorphous silica and cristobalite, depending on the temperature. The effect of surface area was determined, and a correlation between the various sizes was made with the aid of an equation derived on the assumptions that (1) the reaction was diffusion controlled, (2) the particles were essentially spherical, and (3) the interfacial area was constantly changing. The presence of water vapor in the gaseous atmosphere was found to be extremely critical.