BEEM imaging and spectroscopy of buried structures in semiconductors

Abstract Ballistic Electron Emission Microscopy (BEEM) has been shown to be a powerful tool for nanometer-scale characterization of the spatial and electronic properties of semiconductor structures. In this article, we will discuss general aspects of BEEM experiment and theory in true ballistic and quasi-ballistic hot carrier transport. We will review the current state and recent progress in the use of the BEEM imaging and spectroscopy to study metal-semiconductor and metal-insulator-semiconductor interfaces, buried semiconductor heterojunctions and novel quantum objects. Various theoretical BEEM models are discussed, and their ability to describe BEEM experiments is examined. Special attention is drawn to the role of the electron scattering in the metal base layer, at the metal–semiconductor interface and in the semiconductor heterostructure on BEEM spectra.

[1]  Alex Zunger,et al.  Band‐gap narrowing in ordered and disordered semiconductor alloys , 1990 .

[2]  V. Narayanamurti,et al.  Direct observation of localized high current densities in GaN films , 1999 .

[3]  Karlsson,et al.  Charge accumulation at InAs surfaces. , 1996, Physical review letters.

[4]  C. Tu,et al.  GaInNAs/GaAs multiple quantum wells grown by gas-source molecular beam epitaxy , 1998 .

[5]  Ballistic-electron-emission microscopy and spectroscopy of metal/GaN interfaces , 1998 .

[6]  V. Narayanamurti,et al.  Ballistic-electron-emission spectroscopy of Al{sub x}Ga{sub 1{minus}x}As/GaAs heterostructures: Conduction-band offsets, transport mechanisms, and band-structure effects , 1997 .

[7]  Hamann,et al.  Theory of ballistic-electron-emission spectroscopy of NiSi2/Si(111) interfaces. , 1991, Physical review letters.

[8]  S. Kurtz.  Anomalous electroreflectance spectrum of spontaneously ordered Ga0.5In0.5P , 1993 .

[9]  W. Stolz,et al.  Optical Spectroscopic Studies of N‐Related Bands in Ga(N, As) , 1999 .

[10]  D. Friedman,et al.  Effects of strain, substrate misorientation, and excitonic transition on the optical polarization of ordered zinc-blende semiconductor alloys , 1997 .

[11]  G. Nunes,et al.  Atomic resolution scanning tunneling microscopy with a gallium arsenide tip , 1993 .

[12]  H. Hoffmann,et al.  The origin of the integral barrier height in inhomogeneous Au/Co/GaAs67P33-Schottky contacts: A ballistic electron emission microscopy study , 1998 .

[13]  R. Pierson,et al.  Modification of GaN Schottky barrier interfaces probed by ballistic-electron-emission microscopy and spectroscopy , 2000 .

[14]  L. Stockman,et al.  Ballistic electron emission microscopy and spectroscopy of the Au/GaAs(110) interface , 1998 .

[15]  Wang,et al.  Observation by resonant tunneling of high-energy states in GaAs-Ga1-xAlxAs quantum wells. , 1986, Physical review. B, Condensed matter.

[16]  R. Dupuis,et al.  Imaging and local current transport measurements of AlInP quantum dots grown on GaP , 2000 .

[17]  Eugene E. Haller,et al.  Effect of nitrogen on the band structure of GaInNAs alloys , 1999 .

[18]  Ferdinand Scholz,et al.  Band‐gap reduction and valence‐band splitting of ordered GaInP2 , 1995 .

[19]  T. Gaylord,et al.  Ballistic electron emission testing of semiconductor heterostructures , 1991 .

[20]  E. Cartier,et al.  Light emission during direct and Fowler-Nordheim tunneling in ultra thin MOS tunnel junctions , 1997 .

[21]  C. Detavernier,et al.  BALLISTIC ELECTRON EMISSION MICROSCOPY STUDY OF BARRIER HEIGHT INHOMOGENEITIES INTRODUCED IN AU/N-SI SCHOTTKY CONTACTS BY A HF PRETREATMENT , 1998 .

[22]  Charles W. Tu,et al.  Bowing parameter of the band-gap energy of GaNxAs1−x , 1997 .

[23]  P. Daele,et al.  A ballistic electron emission microscopy (BEEM) study of the barrier height change of Au/n-GaAs Schottky barriers due to reactive ion etching , 1997 .

[24]  G. G. Stokes.  "J." , 1890, The New Yale Book of Quotations.

[25]  Bell,et al.  Direct spectroscopy of electron and hole scattering. , 1990, Physical review letters.

[26]  D. Friedman,et al.  Surface Topography and Ordering-Variant Segregation in GaInP2 , 1993 .

[27]  H. Grubin.  The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.

[28]  H. Sirringhaus,et al.  In situ ballistic‐carrier spectroscopy on epitaxial CoSi2/Si(111) and Si(100) , 1995 .

[29]  H. Sirringhaus,et al.  Studying interfaces on a nm scale by BEEM , 1998 .

[30]  Bell,et al.  Probing hot-carrier transport and elastic scattering using ballistic-electron-emission microscopy. , 1992, Physical review. B, Condensed matter.

[31]  G. Strasser,et al.  Quenching of Miniband Transport in Biased Undoped Superlattices , 1997 .

[32]  T. Gaylord,et al.  Electron-wave interference effects in a Ga1−xAlxAs single-barrier structure measured by ballistic electron emission spectroscopy , 1997 .

[33]  John E. Bowers,et al.  Optical investigations of the dynamic behavior of GaSb/GaAs quantum dots , 1996 .

[34]  H. Temkin,et al.  Excitons bound to nitrogen clusters in GaAsN , 1999 .

[35]  W. J. Choyke,et al.  Ballistic electron emission microscopy study of Schottky contacts on 6H- and 4H-SiC , 1998 .

[36]  C. W. Struck,et al.  Scattering by ionization and phonon emission in semiconductors , 1980 .

[37]  V. Narayanamurti,et al.  Fermi-level pinning position at the Au–InAs interface determined using ballistic electron emission microscopy , 1997 .

[38]  P. Daele,et al.  A ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/III-V semiconductor Schottky barrier contacts by chemical pretreatments , 1999 .

[39]  Shiro Sakai,et al.  Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron , 1993 .

[40]  Wladek Walukiewicz,et al.  Band Anticrossing in GaInNAs Alloys , 1999 .

[41]  C. Eder,et al.  Ballistic-electron-emission microscopy on Au-GaAs Schottky diodes using InAs tips , 1998 .

[42]  Bell,et al.  Characterizing hot-carrier transport in silicon heterostructures with the use of ballistic-electron-emission microscopy. , 1993, Physical review. B, Condensed matter.

[43]  C. Ventrice,et al.  Scanning tunneling microscopy and ballistic electron emission spectroscopy studies of molecular beam epitaxially grown Pt/CaF2/Si(111) structures , 1997 .

[44]  Guthrie,et al.  Ballistic-electron-emission spectroscopy of Au/Si and Au/GaAs interfaces: Low-temperature measurements and ballistic models. , 1996, Physical review. B, Condensed matter.

[45]  S. Denbaars,et al.  Conduction band offsets in ordered‐GaInP/GaAs heterostructures studied by ballistic‐electron‐emission microscopy , 1996 .

[46]  Fred H. Pollak,et al.  Atomic layer epitaxy of GaInP ordered alloy , 1990 .

[47]  Lee,et al.  Scanning-tunneling-microscopy investigation of the quantum-size effect in epitaxial CoSi2/Si(111). , 1994, Physical review. B, Condensed matter.

[48]  R. Williams,et al.  Au/ZnSe contacts characterized by ballistic electron emission microscopy , 1996 .

[49]  A. Zunger,et al.  Dependence of the optical properties of semiconductor alloys on the degree of long-range order , 1993 .

[50]  Martin,et al.  Theoretical calculations of heterojunction discontinuities in the Si/Ge system. , 1986, Physical review. B, Condensed matter.

[51]  B. Kaczer,et al.  Investigation of ultrathin SiO2 film thickness variations by ballistic electron emission microscopy , 1998 .

[52]  G. Strasser,et al.  Ballistic electron emission microscopy in liquid helium using low dimensional collector electrodes , 1996 .

[53]  Lee,et al.  Role of elastic scattering in ballistic-electron-emission microscopy of Au/Si(001) and Au/Si(111) interfaces. , 1991, Physical review. B, Condensed matter.

[54]  Gaylord,et al.  Quantum transmittance from low-temperature ballistic electron emission spectroscopy of Au/Si(100) Schottky interfaces. , 1993, Physical review letters.

[55]  H. Craighead,et al.  Ballistic-electron-emission microscopy characteristics of reverse-biased Schottky diodes , 1994 .

[56]  Robert W. Keyes,et al.  The physics of VLSI systems , 1987, Microelectronics systems design series.

[57]  Bell,et al.  Ballistic-hole spectroscopy of interfaces. , 1990, Physical review. B, Condensed matter.

[58]  Ludeke.  Novel transport effects in high-bias ballistic-electron-emission spectroscopy. , 1993, Physical review letters.

[59]  R. Winkler,et al.  L -point backfolding in ordered GaInP 2 determined by electroabsorption measurements , 1999 .

[60]  Lee,et al.  Ballistic-carrier spectroscopy of the CoSi2/Si interface. , 1991, Physical review. B, Condensed matter.

[61]  Lee,et al.  Ballistic-electron-emission-microscopy investigation of hot-carrier transport in epitaxial CoSi2 films on Si(100) and Si(111). , 1995, Physical review. B, Condensed matter.

[62]  E. Cartier,et al.  Determination of the energy-dependent conduction band mass in SiO2 , 1999 .

[63]  S. Tanaka,et al.  Ballistic electron emission microscopy studies on Au/CaF2/n-Si(111) heterostructures , 1998 .

[64]  B. Kaczer,et al.  Ballistic‐electron emission microscopy studies of charge trapping in SiO2 , 1996 .

[65]  A. Schenk,et al.  Energy-dependent conduction band mass of SiO2 determined by ballistic electron emission microscopy , 1999 .

[66]  Lee,et al.  Electron-hole pair creation and metal/semiconductor interface scattering observed by ballistic-electron-emission microscopy. , 1992, Physical review. B, Condensed matter.

[67]  A. Bauer,et al.  PROBING THE CAF2 DENSITY OF STATES AT AU/CAF2/N-SI(111) INTERFACES WITH PHOTOELECTRON SPECTROSCOPY AND BALLISTIC-ELECTRON EMISSION MICROSCOPY , 1994 .

[68]  R. Buhrman,et al.  Ballistic-electron-emission microscopy of conduction-electron surface states , 2000 .

[69]  S. Tanaka,et al.  Hot-electron transport through Au/CaF2/Si(111) structure studied by ballistic electron emission spectroscopy , 1999 .

[70]  Nikolai N. Ledentsov,et al.  RADIATIVE RECOMBINATION IN TYPE-II GASB/GAAS QUANTUM DOTS , 1995 .

[71]  G. Strasser,et al.  Ballistic electron emission microscopy on biased GaAs–AlGaAs superlattices , 1998 .

[72]  M. S. Skolnick,et al.  Band gap of ‘‘completely disordered’’ Ga0.52In0.48P , 1995 .

[73]  Bell,et al.  Direct investigation of subsurface interface electronic structure by ballistic-electron-emission microscopy. , 1988, Physical review letters.

[74]  Andrew G. Glen,et al.  APPL , 2001 .

[75]  J. Wosik,et al.  Electron beam flash evaporation for YBaCuO and BiCaSrCuO thin films , 1989 .

[76]  E. Cartier,et al.  Hot electron transport in SiO2 probed with a scanning tunnel microscope , 1995 .

[77]  Quantum-mechanical analysis of the elastic propagation of electrons in the Au/Si system: Application to ballistic-electron-emission microscopy , 1998, cond-mat/9805008.

[78]  W. J. Choyke,et al.  Direct observation of conduction-band structure of 4H- and 6H-SiC using ballistic electron emission microscopy , 1998 .

[79]  H. Temkin,et al.  III–V–N compounds for infrared applications , 1997 .

[80]  D. Newns,et al.  Image force effects and the dielectric response of SiO2 in electron transport across metal–oxide–semiconductor structures , 1997 .

[81]  John D. Perkins,et al.  Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction in GaAs{sub 1{minus}x}N{sub x } with x {lt} 0.03 , 1999 .

[82]  F. Mcfeely,et al.  Impact ionization in silicon , 1993 .

[83]  Measurement of the AlGaInAs/AlGaAs conduction-band offset using ballistic electron emission spectroscopy , 1998 .

[84]  H. Sirringhaus,et al.  Epitaxial metal silicides: interface mapping by scanning probe techniques , 1995 .

[85]  S. M. Sze.  Physics of semiconductor devices /2nd edition/ , 1981 .

[86]  V. Narayanamurti,et al.  Local conduction band offset of GaSb self-assembled quantum dots on GaAs , 1997 .

[87]  A. Bauer,et al.  Ballistic‐electron emission microscopy study of the Au/Si(111)7×7 and Au/CaF2/Si(111)7×7 interfaces , 1994 .

[88]  Fernando Ponce,et al.  High dislocation densities in high efficiency GaN‐based light‐emitting diodes , 1995 .

[89]  Douglas A. Buchanan,et al.  Defects generated by Fowler–Nordheim injection in silicon dioxide films produced by plasma‐enhanced chemical‐vapour deposition with nitrous oxide and silane , 1995 .

[90]  D. Vandré,et al.  Ballistic‐electron emission microscopy on the Au/n‐Si(111)7×7 interface , 1994 .

[91]  Staggered to straddling band lineups in InAs/Al(As, Sb) , 1999 .

[92]  J. Olson,et al.  Ordering-induced band structure effects in GaInP studied by ballistic electron emission spectroscopy , 1999 .

[93]  Wei,et al.  Giant and composition-dependent optical bowing coefficient in GaAsN alloys. , 1996, Physical review letters.

[94]  Brian R. Bennett,et al.  MOLECULAR BEAM EPITAXIAL GROWTH OF INSB, GASB, AND ALSB NANOMETER-SCALE DOTS ON GAAS , 1996 .

[95]  Sarah R. Kurtz,et al.  1-eV solar cells with GaInNAs active layer , 1998 .

[96]  R. H. Williams,et al.  Ballistic electron emission microscopy of Au–InAs–GaAs system , 1996 .

[97]  T. Gaylord,et al.  Ballistic-electron-emission-spectroscopy detection of monolayer thickness fluctuations in a semiconductor heterostructure , 1999 .

[98]  Darryl L. Smith,et al.  Effect of electron scattering on second derivative ballistic electron emission spectroscopy in Au/GaAs/AlGaAs heterostructures , 1999 .

[99]  I. M. Dharmadasa,et al.  Metal/n-CdTe interfaces: A study of electrical contacts by deep level transient spectroscopy and ballistic electron emission microscopy , 1998 .

[100]  Jansen,et al.  Spin-polarized tunneling with GaAs tips in scanning tunneling microscopy. , 1996, Physical review. B, Condensed matter.

[101]  P. Niedermann,et al.  Ballistic electron emission microscopy study of PtSi–n‐Si(100) Schottky diodes , 1992 .

[102]  L. Bell.  MOMENTUM CONSERVATION FOR HOT ELECTRONS AT THE AU/SI(111) INTERFACE OBSERVED BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY , 1997 .

[103]  Ramaswamy,et al.  Measurement of hot-electron scattering processes at Au/Si(100) Schottky interfaces by temperature-dependent ballistic-electron-emission microscopy. , 1996, Physical review. B, Condensed matter.

[104]  G. Strasser,et al.  Ballistic Electron Emission Microscopy on Quantum Wires , 1997 .

[105]  Ludeke,et al.  Ballistic-electron-emission microscopy and spectroscopy of GaP(110)-metal interfaces. , 1991, Physical review letters.

[106]  H. Liu,et al.  Resonant tunneling through single layer heterostructures , 1987 .

[107]  T. Gaylord,et al.  Low‐temperature scanning tunneling microscope for ballistic electron emission microscopy and spectroscopy , 1995 .

[108]  H. Sirringhaus,et al.  In situ study of epitaxial CoSi2/Si(111) by ballistic‐electron‐emission microscopy , 1994 .

[109]  W. Kaiser,et al.  Ballistic‐electron‐emission microscopy investigation of Schottky barrier interface formation , 1989 .

[110]  Meng,et al.  Nanometer-Scale Creation and Characterization of Trapped Charge in SiO2 Films Using Ballistic Electron Emission Microscopy. , 1996, Physical review letters.

[111]  Flores,et al.  Elastic scattering and the lateral resolution of ballistic electron emission microscopy: Focusing effects on the Au/Si interface. , 1996, Physical review letters.

[112]  R. L. Meirhaeghe,et al.  A ballistic electron emission microscopy (BEEM) study of the barrier height change of Au/n-GaAs Schottky contacts due to mechanical polishing , 1995 .

[113]  I. Ivanov,et al.  Optical characterization of MBE-grown GaNAs , 1997 .

[114]  Buhrman,et al.  Spin-dependent hot electron transport in Co/Cu thin films , 2000, Physical review letters.

[115]  J. Simmons.  Generalized Formula for the Electric Tunnel Effect between Similar Electrodes Separated by a Thin Insulating Film , 1963 .

[116]  B. Kaczer,et al.  Microscopic characterization of hot-electron spreading and trapping in SiO2 films using ballistic electron emission microscopy , 1998 .

[117]  William J. Kaiser,et al.  Scanning Tunneling Microscopy , 2019, CIRP Encyclopedia of Production Engineering.

[118]  P. Niedermann,et al.  BALLISTIC-ELECTRON-EMISSION-MICROSCOPY STUDIES ON AU/SIO2/N-TYPE SI(100) AND IR/SIO2/N-TYPE SI(100) STRUCTURES WITH VERY THIN OXIDES , 1998 .