Electronic structure calculations for Si/Si1−xGex multi-quantum well devices

[1]  J. Derrien,et al.  Stark effect modeling in strained n-type Si/Si1−xGex resonant tunneling heterostructures , 2002 .

[2]  Douglas J. Paul,et al.  Si/SiGe electron resonant tunneling diodes , 2000 .

[3]  M. Henini,et al.  Resonant tunneling and photoluminescence spectroscopy in quantum wells containing self-assembled quantum dots , 2000 .

[4]  P.R. Berger,et al.  Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities , 1999, IEEE Electron Device Letters.

[5]  D. Paul.  Silicon‐Germanium Strained Layer Materials in Microelectronics , 1999 .

[6]  Gabriel M. Crean,et al.  Silicon quantum integrated circuits - an attempt to fabricate silicon-based quantum devices using CMOS fabrication techniques , 1998 .

[7]  A. Gruhle,et al.  Recent advances with SiGe heterojunction bipolar transistors , 1997 .

[8]  G. W. Smith,et al.  Cross-barrier recombination in a GaAs/AlGaAs double-barrier resonant tunneling structure , 1996 .

[9]  T. Mizutani,et al.  Current–voltage characteristics of GaAs/AlAs double‐barrier resonant tunneling diodes with a Si‐planar‐doped barrier , 1996 .

[10]  Vogl,et al.  Electronic-band parameters in strained Si1-xGex alloys on Si1-yGey substrates. , 1993, Physical review. B, Condensed matter.

[11]  T. Andersson,et al.  Self‐consistent analysis of electric field‐dependent intersubband transitions for a thin layer inserted quantum well , 1993 .

[12]  Bernard S. Meyerson,et al.  Electron resonant tunneling in Si/SiGe double barrier diodes , 1991 .

[13]  People,et al.  Band nonparabolicities in lattice-mismatch-strained bulk semiconductor layers. , 1990, Physical review. B, Condensed matter.

[14]  A. Mauger,et al.  New method for calculating Hartree-Fock energy-band structures in solids using a linear combination of atomic orbitals basis: Application to diamond , 1977 .

[15]  Lu J. Sham,et al.  ONE-PARTICLE PROPERTIES OF AN INHOMOGENEOUS INTERACTING ELECTRON GAS. , 1966 .

[16]  P. Hohenberg,et al.  Inhomogeneous Electron Gas , 1964 .

[17]  Gottfried H. Döhler,et al.  Electronic structure of semiconductors with doping superlattices , 1983 .