Picosecond correlation measurements of indium phosphide photoconductors
暂无分享,去创建一个
The response times of InP photoconductors under picosecond optical illumination are observed to differ widely depending on whether the electrical bias is dc or a short pulse. The use a pulsed bias gives a slower response (>100 ps) which is more characteristic of the intrinsic material properties, than a dc bias which gives a very fast (<15 ps) response and can be attributed to imperfect contacts.
[1] W. Augustyniak,et al. Picosecond photoconductivity in radiation‐damaged silicon‐on‐sapphire films , 1981 .
[2] F. W. Lampe,et al. Spectroscopic detection of silylene in the infrared multiphoton decomposition of silane , 1983 .
[3] John C. Bean,et al. Picosecond optoelectronic detection, sampling, and correlation measurements in amorphous semiconductors , 1980 .
[4] F. J. Leonberger,et al. High‐speed InP optoelectronic switch , 1979 .