Optical lithography simulation and photoresist optimization for photomask fabrication

The demand for smaller and more uniform features on photomasks is rapidly increasing. The complexity of these patterns is also increasing with the need for optical proximity correction and phase shifting structures. These complex mask features demand unprecedented accuracy in pattern placement and dimensional control. We have conducted research designed to optimize the process for laser pattern generation by improving resolution and process latitude. Lithographic simulation was utilized for process optimization because of the very high cost of mask patterning and metrology experiments.

[1]  Clifford L. Henderson,et al.  Influence of optical nonlinearities of the photoresist on the photolithographic process: basics , 1997, Advanced Lithography.

[2]  Brian Martin,et al.  Comparison of recent development models in optical lithography simulation , 1998, Advanced Lithography.

[3]  Clifford L. Henderson,et al.  Modeling parameter extraction for DNQ-novolak thick film resists , 1998, Advanced Lithography.

[4]  Clifford L. Henderson,et al.  Improved simulation of photoresists using new development models , 1998, Advanced Lithography.

[5]  P. S. Hauge,et al.  Characterization of positive photoresist , 1975, IEEE Transactions on Electron Devices.

[6]  K. L. Konnerth,et al.  IOTA, a new computer controlled thin film thickness measurement tool , 1972 .

[7]  Clifford L. Henderson,et al.  Photoresist characterization for lithography simulation: II. Exposure parameter measurements , 1997, Advanced Lithography.

[8]  Clifford L. Henderson,et al.  Dissolution of phenolic polymers in aqueous base: the influence of polymer structure , 1998, Advanced Lithography.

[9]  Hideo Kobayashi,et al.  Photomask blanks enhancement for the laser reticle writer , 1995, Photomask and Next Generation Lithography Mask Technology.

[10]  Chris A. Mack,et al.  Diffusivity measurements in polymers: I. Lithographic modeling results , 1997, Advanced Lithography.

[11]  Chris A. Mack,et al.  A New Development Model For Lithography Simulation , 1997 .

[12]  Toru Kajita,et al.  Design of i-line photoresist capable of sub-quarter-micron lithography: effects of novel phenolic resin with controlled end group , 1998, Advanced Lithography.

[13]  Frank Duray,et al.  Reticle contributions to CD uniformity for 0.25-μm DUV lithography , 1998, Advanced Lithography.

[14]  Lars W. Liebmann,et al.  Lithographic effects of mask critical dimension error , 1998, Advanced Lithography.

[15]  Clifford L. Henderson,et al.  Photoresist characterization for lithography simulation: III. Development parameter measurements , 1997, Advanced Lithography.

[16]  William D. Hinsberg,et al.  Diffusivity measurements in polymers: II. Residual casting solvent measurement by liquid scintillation counting , 1997, Advanced Lithography.

[17]  Cheng-Bai Xu,et al.  Sub-0.30-μm i-line photoresist: formulation strategy and lithographic characterization , 1998, Advanced Lithography.