Dielectric breakdown of ferromagnetic tunnel junctions
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Wouter Oepts | W. Oepts | R. Coehoorn | R Reinder Coehoorn | de Wjm Wim Jonge | De Jonge | Hj Verhagen | H. Verhagen
[1] R. Degraeve,et al. A new model for the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown , 1998 .
[2] Hong Tian,et al. Electrostatic discharge damage of MR heads , 1995 .
[3] Janusz J. Nowak,et al. Current distribution effects in magnetoresistive tunnel junctions , 1997 .
[4] J. Moodera,et al. Interface Magnetism and Spin Wave Scattering in Ferromagnet-Insulator-Ferromagnet Tunnel Junctions , 1998 .
[5] J. Simmons. Generalized Formula for the Electric Tunnel Effect between Similar Electrodes Separated by a Thin Insulating Film , 1963 .
[6] Ih-Chin Chen,et al. Electrical breakdown in thin gate and tunneling oxides , 1985 .
[7] W. S. Nicol. Thickness variation of breakdown field strength in plasma oxidized aluminum films , 1968 .
[8] Young Keun Kim,et al. Electrostatic discharge sensitivity of giant magnetoresistive recording heads , 1997 .