Scallop Reduction in Bosch Process Using a Small Chamber and Rapid Gas Switching Rate

[1]  Banqiu Wu,et al.  High aspect ratio silicon etch: A review , 2010 .

[2]  H. Hayashi,et al.  Mechanism of Radical Control in Capacitive RF Plasma for ULSI Processing , 1998 .

[3]  Sommawan Khumpuang,et al.  A MOSFET Fabrication Using a Maskless Lithography System in Clean-Localized Environment of Minimal Fab , 2015, IEEE Transactions on Semiconductor Manufacturing.

[4]  M. Boulos.  The inductively coupled R.F. (radio frequency) plasma , 1985 .

[5]  F. Laermer,et al.  Challenges, developments and applications of silicon deep reactive ion etching , 2003 .

[6]  M. Offenberg,et al.  Bosch deep silicon etching: improving uniformity and etch rate for advanced MEMS applications , 1999, Technical Digest. IEEE International MEMS 99 Conference. Twelfth IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.99CH36291).

[7]  Fumito Imura,et al.  Analyses on Cleanroom-Free Performance and Transistor Manufacturing Cycle Time of Minimal Fab , 2015, IEEE Transactions on Semiconductor Manufacturing.

[8]  H. Maekawa,et al.  Photolithography for Minimal Fab System , 2013 .

[9]  Ian Ronald Johnston,et al.  Recent advances in silicon etching for MEMS using the ASE™ process , 1999 .

[10]  G. Kovacs,et al.  Bulk micromachining of silicon , 1998, Proc. IEEE.

[11]  Shufeng Bai,et al.  Wafer-scale patterning of sub-40 nm diameter and high aspect ratio (>50:1) silicon pillar arrays by nanoimprint and etching , 2008, Nanotechnology.

[12]  T. Reed.  Induction‐Coupled Plasma Torch , 1961 .

[13]  Chang-Koo Kim,et al.  Comparison of deep silicon etching using SF6/C4F8 and SF6/C4F6 plasmas in the Bosch process , 2008 .

[14]  Leonard W. Schaper,et al.  Effect of process parameters on via formation in Si using deep reactive ion etching , 2007 .

[15]  J. Bustillo,et al.  Surface micromachining for microelectromechanical systems , 1998, Proc. IEEE.