Photoluminescence in metal doped Ge0.15Se0.85 glass

[1]  P. Taylor,et al.  Transient electrical transport in pure and doped chalcogenide glasses , 1981 .

[2]  J. M. Chamberlain,et al.  Photoinduced absorption in Se-Ge glasses , 1981 .

[3]  R. Durný EPR study of Mn2+ in chalcogen-rich GeSe glasses , 1980 .

[4]  F. Mollot,et al.  Spectral analysis of the fatigue of the photoluminescence and of the creation of paramagnetic centres in amorphous Ge x Se1–x , 1980 .

[5]  B. Weinstein Detailed photoluminescence intensity and lineshape studies of doped a-As2Se3 films , 1980 .

[6]  M. Morgan,et al.  Defects in chalcogenide glasses II. The effect of metallic impurities on the transport properties of a-As2Se3 , 1980 .

[7]  S. G. Bishop,et al.  Iron impurities as non-radiative recombination centres in chalcogenide glasses , 1979 .

[8]  R. Street,et al.  Defect states in Ge chalcogenides observed by photoluminescence and ESR , 1979 .

[9]  M. Kastner,et al.  The effect of metallic additives on photoluminescence fatigue in a-As2Se3 , 1979 .

[10]  J. M. Chamberlain,et al.  Low temperature photoluminescence and fatigue effects in SeGe glasses , 1978 .

[11]  P. J. Dean,et al.  The effects of core structure on radiative and non-radiative recombinations at metal ion substituents in semiconductors and phosphors , 1978 .

[12]  E. Ford,et al.  A furnace for the synthesis of chalcogenide glasses , 1976 .

[13]  F. Schirrmeister,et al.  Poole frenkel controlled charge carrier transport of amorphous layers Ge4Se5Te in the model of charged dangling bonds , 1980 .