Oxidation mechanism of ionic transport of copper in SiO2 dielectrics

[1]  J. Neaton,et al.  First-principles study of adhesion at C u / S i O 2 interfaces , 2003, cond-mat/0304459.

[2]  Karen Maex,et al.  Development of sub-10-nm atomic layer deposition barriers for Cu/low-k interconnects , 2002 .

[3]  S. Smith,et al.  Barrier integrity testing of Ta using triangular voltage sweep and a novel CV-BTS test structure , 2002 .

[4]  W. Gill,et al.  Interactions Between Nanoporous Silica and Copper , 2002 .

[5]  Eicke R. Weber,et al.  Physics of Copper in Silicon , 2002 .

[6]  T. Lu,et al.  Thermal stability of xerogel films , 2001 .

[7]  Yosi Shacham-Diamand,et al.  Barrier layers for Cu ULSI metallization , 2001 .

[8]  Eric Eisenbraun,et al.  Ultrathin Diffusion Barriers/Liners for Gigascale Copper Metallization , 2000 .

[9]  Daniel C. Edelstein,et al.  Copper Metallization for High Performance Silicon Technology , 2000 .

[10]  Ronald J. Gutmann,et al.  Copper-Fundamental Mechanisms for Microelectronic Applications , 2000 .

[11]  Karen Maex,et al.  Wafer thermal desorption spectrometry in a rapid thermal processor using atmospheric pressure ionization mass spectrometry , 2000 .

[12]  H. Gamble,et al.  An investigation into the performance of diffusion barrier materials against copper diffusion using metal-oxide-semiconductor (MOS) capacitor structures , 1999 .

[13]  Seung-Yun Lee,et al.  Characterization of TiN barriers against Cu diffusion by capacitance–voltage measurement , 1998 .

[14]  J. Funk,et al.  Particle-Packing Phenomena and Their Application in Materials Processing , 1997 .

[15]  K. Drescher,et al.  Dielectric barriers for Cu metallization systems , 1997, European Workshop Materials for Advanced Metallization,.

[16]  Kenji Hinode,et al.  Passivation effect of silicon nitride against copper diffusion , 1997 .

[17]  C. Yue,et al.  Kinetics of copper drift in PECVD dielectrics , 1996, IEEE Electron Device Letters.

[18]  K. Drescher,et al.  Barrier behaviour of plasma deposited silicon oxide and nitride against Cu diffusion , 1995 .

[19]  Chien Chiang,et al.  Diffusion of copper through dielectric films under bias temperature stress , 1995 .

[20]  S. Murarka,et al.  Copper metallization for ULSL and beyond , 1995 .

[21]  Shizhi Wang,et al.  Barriers Against Copper Diffusion into Silicon and Drift Through Silicon Dioxide , 1994 .

[22]  William G. Oldham,et al.  Copper transport in thermal SiO2 , 1993 .

[23]  Peter A. Markowich,et al.  The Stationary Semiconductor Device Equations. , 1987 .

[24]  R. C. Weast.  CRC Handbook of Chemistry and Physics , 1973 .

[25]  S. M. Sze,et al.  Physics of semiconductor devices , 1969 .

[26]  A. S. Grove,et al.  Ion Transport Phenomena in Insulating Films , 1965 .