The Study of Self-Heating and Hot-Electron Effects for AlGaN/GaN Double-Channel HEMTs

The direct current characteristics of AlGaN/GaN double-channel HEMTs (DC-HEMTs) are investigated by using 2-D numerical simulations. The output characteristics have been predicted with the drift-diffusion, thermodynamic, hydrodynamic, and hot-electron models, respectively. The prediction by the hydrodynamic model is in good agreement with the experiment. It is demonstrated that the hot-electron effect makes a negligible contribution to the negative differential conductance (NDC) of an AlGaN/GaN DC-HEMT; instead, the NDC effect is caused by the self-heating effect. The transfer and transconductance characteristics of an AlGaN/GaN DC-HEMT are also discussed in detail. Finally, a new In0.18Al0.82N /GaN/AlGaN/GaN DC-HEMT structure is proposed for optimizing AlGaN/GaN DC-HEMTs.

[1]  Dependence of dark current and photoresponse characteristics on polarization charge density for GaN-based avalanche photodiodes , 2011 .

[2]  Xiaodong Wang,et al.  The plasmonic resonant absorption in GaN double-channel high electron mobility transistors , 2011 .

[3]  U. Mishra,et al.  Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method , 2011, IEEE Transactions on Electron Devices.

[4]  L. Eastman,et al.  Fabrication and Characterization of Thin-Barrier $ \hbox{Al}_{0.5}\hbox{Ga}_{0.5}\hbox{N/AlN/GaN}$ HEMTs , 2011, IEEE Electron Device Letters.

[5]  U. K. Mishra,et al.  Transport Studies of AlGaN/GaN Heterostructures of Different Al Mole Fractions With Variable $\hbox{SiN}_{x}$ Passivation Stress , 2011, IEEE Transactions on Electron Devices.

[6]  M. Higashiwaki,et al.  Two-Stage High-Gain High-Power Distributed Amplifier Using Dual-Gate GaN HEMTs , 2011, IEEE Transactions on Microwave Theory and Techniques.

[7]  U. Mishra,et al.  Effects of Barrier Thinning on Small-Signal and 30-GHz Power Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors , 2011, IEEE Transactions on Electron Devices.

[8]  Nidhi,et al.  Self-Aligned Technology for N-Polar GaN/Al(Ga)N MIS-HEMTs , 2011, IEEE Electron Device Letters.

[9]  Nidhi,et al.  N-Polar GaN/AlN MIS-HEMT for Ka-Band Power Applications , 2010, IEEE Electron Device Letters.

[10]  Xiang Gao,et al.  Al2O3 passivated InAlN/GaN HEMTs on SiC substrate with record current density and transconductance , 2010 .

[11]  The role of ultrathin AlN barrier in the reduction in the hot electron and self-heating effects for GaN-based double-heterojunction high electron mobility transistors , 2010 .

[12]  Haifeng Sun,et al.  205-GHz (Al,In)N/GaN HEMTs , 2010, IEEE Electron Device Letters.

[13]  A. Balandin,et al.  Reduced thermal resistance of the silicon-synthetic diamond composite substrates at elevated temperatures , 2010 .

[14]  M. Saraniti,et al.  Effects of Threading Dislocations on AlGaN/GaN High-Electron Mobility Transistors , 2009, IEEE Transactions on Electron Devices.

[15]  M. Shur,et al.  Deep-Ultraviolet Light-Emitting Diodes , 2010, IEEE Transactions on Electron Devices.

[16]  J. Carlin,et al.  Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors , 2009 .

[17]  Amir Dabiran,et al.  Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures , 2008 .

[18]  K. Lau,et al.  Low-frequency noise properties of double channel AlGaN/GaN HEMTs , 2008 .

[19]  Subhasis Haldar,et al.  A compact C-V model for 120nm AlGaN/GaN HEMT with modified field dependent mobility for high frequency applications , 2007, Microelectron. J..

[20]  Improved electrical properties in AlGaN∕GaN heterostructures using AlN∕GaN superlattice as a quasi-AlGaN barrier , 2007 .

[21]  Weida Hu,et al.  Self-heating simulation of GaN-based metal-oxide-semiconductor high-electron-mobility transistors including hot electron and quantum effects , 2006 .

[22]  Alexander A. Balandin,et al.  Electrothermal simulation of the self-heating effects in GaN-based field-effect transistors , 2006 .

[23]  Eric Feltin,et al.  High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures , 2006 .

[24]  A. Chini,et al.  Use of double-channel heterostructures to improve the access resistance and linearity in GaN-based HEMTs , 2006, IEEE Transactions on Electron Devices.

[25]  Alexander A. Balandin,et al.  Increased thermal conductivity of free‐standing low‐dislocation‐density GaN films , 2005 .

[26]  Alexander A. Balandin,et al.  Thermal conduction in AlxGa1−xN alloys and thin films , 2005 .

[27]  Yugang Zhou,et al.  AlGaN-GaN double-channel HEMTs , 2005, IEEE Transactions on Electron Devices.

[28]  Alexander A. Balandin,et al.  Temperature dependence of thermal conductivity of AlxGa1−xN thin films measured by the differential 3ω technique , 2004 .

[29]  C.C. Lee,et al.  Thermal modeling and measurement of AlGaN-GaN HFETs built on sapphire and SiC substrates , 2004, IEEE Transactions on Electron Devices.

[30]  R. Mickevicius,et al.  Simulation of hot electron and quantum effects in AlGaN/GaN heterostructure field effect transistors , 2004 .

[31]  Valentin O. Turin,et al.  Performance degradation of GaN field-effect transistors due to thermal boundary resistance at GaN/substrate interface , 2004 .

[32]  T. Andersson,et al.  Mobility in epitaxial GaN: Limitations of free-electron concentration due to dislocations and compensation , 2003 .

[33]  Ravindra P. Joshi,et al.  Analysis of dislocation scattering on electron mobility in GaN high electron mobility transistors , 2003 .

[34]  Ka-band 2.3W power AlGaN/GaN heterojunction FET , 2002, Digest. International Electron Devices Meeting,.

[35]  Chin-Chuan Cheng,et al.  Improved temperature-dependent performances of a novel InGaP-InGaAs-GaAs double channel pseudomorphic high electron mobility transistor (DC-PHEMT) , 2002 .

[36]  Investigation into the charge distribution and barrier profile tailoring in AlGaN/GaN double heterostructures by self-consistent Poisson–Schrödinger calculations and capacitance–voltage profiling , 2002 .

[37]  Hot electrons in group-III nitrides at moderate electric fields , 2002 .

[38]  Michael S. Shur,et al.  Self-heating and kink effects in a-Si:H thin film transistors , 2000 .

[39]  R. Dimitrov,et al.  Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures , 2000 .

[40]  Lester F. Eastman,et al.  Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures , 1999 .

[41]  M. Shur,et al.  Two-channel AlGaN/GaN heterostructure field effect transistor for high power applications , 1999 .

[42]  H. Morkoç,et al.  AlGaN/GaN double heterostructure channel modulation doped field effect transistors (MODFETs) , 1997 .

[43]  K. Varahramyan,et al.  A model for specific contact resistance applicable for titanium silicide-silicon contacts , 1996 .

[44]  C. Canali,et al.  Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature , 1975, IEEE Transactions on Electron Devices.