论文信息 - Hole-well antimonide laser diodes on GaSb operating near 2.93 /spl mu/m

Hole-well antimonide laser diodes on GaSb operating near 2.93 /spl mu/m

The operation of electrically-pumped type-II Sb-based laser diodes in which only the holes are quantum confined is reported. These laser structures were fabricated by molecular beam epitaxy on (001) GaSb substrates. In the multi-quantum well region, radiative recombinations originate from InGaSb hole wells embedded in InGaAsSb barriers lattice-matched to GaSb. Laser operation was demonstrated from such structures up to 243 K at 2.93 μm in the pulsed regime (200 ns. 5 kHz). A minimum threshold of about 12.8 kW/cm 2 combined with a T 0 around 70 K have been measured.

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