论文信息 - Evidence of damage at gallium arsenide–insulator interfaces

Evidence of damage at gallium arsenide–insulator interfaces

Photoluminescence (PL) measurements at 77 K have been used to study the interfaces between gallium arsenide and dielectrics grown by anodic and pyrolytic processes. The observed changes in the PL spectra after the deposition of the dielectrics suggest that damage is introduced in both cases during the growth process.

L. Messick | C. Zeisse | W. Lum

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