论文信息 - Plasma assisted molecular beam epitaxy of thin GaN films on Si(111) and SiC/Si(111) substrates: Effect of SiC and polarity issues - 字舞流文

Plasma assisted molecular beam epitaxy of thin GaN films on Si(111) and SiC/Si(111) substrates: Effect of SiC and polarity issues

A. V. Osipov | S. Kukushkin | A. Mizerov | A. Redkov | S. Timoshnev | A. Osipov | A. Redkov