论文信息 - Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s

Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s

Oxide-confined 850 nm vertical-cavity surface-emitting lasers operating at 40 Gbit/s at current densities ~10 kA/cm 2 are realised. The deconvoluted rise time of the device is below 10 ps and remains hardly temperature sensitive up to 100degC.

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