Vertical SnS2/Si heterostructure for tunnel diodes
暂无分享,去创建一个
[1] Xing Zhang,et al. Improvement of thermal stability of nickel germanide using nitrogen plasma pretreatment for germanium-based technology , 2018, Science China Information Sciences.
[2] X. Duan,et al. Van der Waals heterostructures and devices , 2016 .
[3] E. Lind,et al. High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors , 2013, IEEE Electron Device Letters.
[4] Stephen McDonnell,et al. Defect-dominated doping and contact resistance in MoS2. , 2014, ACS nano.
[5] Yuchao Yang,et al. A Novel Tunnel FET Design Through Adaptive Bandgap Engineering With Constant Sub-Threshold Slope Over 5 Decades of Current and High $\text{I}_{\mathrm {ON}}/\text{I}_{\mathrm {OFF}}$ Ratio , 2017, IEEE Electron Device Letters.
[6] Aron Walsh,et al. Electronic and optical properties of single crystal SnS2: an earth-abundant disulfide photocatalyst , 2016, Journal of Materials Chemistry A.
[7] Wolfram Jaegermann,et al. Band lineup of layered semiconductor heterointerfaces prepared by van der Waals epitaxy: Charge transfer correction term for the electron affinity rule , 1999 .
[8] C. Hu,et al. 2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures , 2016 .
[9] Sungjoo Lee,et al. Tunneling field effect transistor integrated with black phosphorus-MoS2 junction and ion gel dielectric , 2017 .
[10] Jing Guo,et al. Dual-gated MoS2/WSe2 van der Waals tunnel diodes and transistors. , 2015, ACS nano.
[11] Wenjuan Zhu,et al. Esaki Diodes Based on 2-D/3-D Heterojunctions , 2018, IEEE Transactions on Electron Devices.
[12] S. An,et al. A Van Der Waals Homojunction: Ideal p–n Diode Behavior in MoSe2 , 2015, Advanced materials.
[13] Siddharth Rajan,et al. High current density 2D/3D MoS2/GaN Esaki tunnel diodes , 2016, 1606.00509.
[14] Seong Chu Lim,et al. Charge Transport in MoS2/WSe2 van der Waals Heterostructure with Tunable Inversion Layer. , 2017, ACS nano.
[15] Mingjun Liu,et al. Short-channel effects on the static noise margin of 6T SRAM composed of 2D semiconductor MOSFETs , 2019, Science China Information Sciences.
[16] David-Wei Zhang,et al. Tunable SnSe2 /WSe2 Heterostructure Tunneling Field Effect Transistor. , 2017, Small.
[17] A. Onton,et al. Temperature dependence of the band gap of silicon , 1974 .
[18] P. Ajayan,et al. A subthermionic tunnel field-effect transistor with an atomically thin channel , 2015, Nature.
[19] Yanqing Wu,et al. Development of two-dimensional materials for electronic applications , 2016, Science China Information Sciences.
[20] Ru Huang,et al. A novel Si tunnel FET with 36mV/dec subthreshold slope based on junction depleted-modulation through striped gate configuration , 2012, 2012 International Electron Devices Meeting.
[21] Adrian M. Ionescu,et al. Tunnel field-effect transistors as energy-efficient electronic switches , 2011, Nature.
[22] N. Fang,et al. Accumulation-Mode Two-Dimensional Field-Effect Transistor: Operation Mechanism and Thickness Scaling Rule. , 2018, ACS applied materials & interfaces.