Optical properties of InAsSb nanostructures embedded in InGaAsSb strain reducing layer

[1]  C. Jagadish,et al.  Emission wavelength extension of mid-infrared InAsSb/InP nanostructures using InGaAsSb sandwich layers , 2010 .

[2]  H. Tan,et al.  Enhanced photoluminescence efficiency of mid-infrared InAsSb nanostructures using a carrier blocking layer , 2010 .

[3]  Chennupati Jagadish,et al.  Effect of matrix material on the morphology and optical properties of InP-based InAsSb nanostructures , 2009 .

[4]  H. Tan,et al.  Formation and shape control of InAsSb/InP (001) nanostructures , 2009 .

[5]  J. Chyi,et al.  Effects of thermal annealing on the emission properties of type-II InAs/GaAsSb quantum dots , 2009 .

[6]  C. Jagadish,et al.  Lasers and photodetectors for mid-infrared 2–3 μm applications , 2008 .

[7]  Seungyong Jung,et al.  GaSb based light emitting diodes with strained InGaAsSb type I quantum well active regions , 2008 .

[8]  J. Chyi,et al.  Carrier dynamics of type-II InAs∕GaAs quantum dots covered by a thin GaAs1−xSbx layer , 2008 .

[9]  Thomas Walther,et al.  1.55μm InAs quantum dots grown on a GaAs substrate using a GaAsSb metamorphic buffer layer , 2008 .

[10]  S. Anantathanasarn,et al.  Influence of an ultrathin GaAs interlayer on the structural properties of InAs/InGaAsP/InP (001) quantum dots investigated by cross-sectional scanning tunneling microscopy , 2008 .

[11]  C. Jin,et al.  Optical transitions in type-II InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer , 2007 .

[12]  Roland Teissier,et al.  InAs∕AlSb quantum cascade lasers emitting below 3μm , 2007 .

[13]  C. Wu,et al.  Unusual optical properties of type-IIInAs∕GaAs0.7Sb0.3quantum dots by photoluminescence studies , 2007 .

[14]  T. Akiyama,et al.  Controlling shape of InAs1- xSbx quantum structures on InP for quantum dots with 1.55-μm emission , 2007 .

[15]  J. Chyi,et al.  Enhanced thermal stability and emission intensity of InAs quantum dots covered by an InGaAsSb strain-reducing layer , 2006 .

[16]  R. Piron,et al.  InAs(Sb)/InP(100) quantum dots for mid-infrared emitters: observation of 2.35 µm photoluminescence , 2006 .

[17]  J. Yang,et al.  Growth and characteristics of ultralow threshold 1.45 μm metamorphic InAs tunnel injection quantum dot lasers on GaAs , 2006 .

[18]  N. Yamamoto,et al.  Change in band configuration of In0.57Ga0.43As1-xSbx/AlAs0.48Sb0.52In0.57Ga0.43As1-xSbx/AlAs0.48Sb0.52 quantum wells from type-II to type-I by increasing Sb composition x , 2006 .

[19]  J. Even,et al.  InAsSb∕InP quantum dots for midwave infrared emitters: A theoretical study , 2005 .

[20]  Richard A. Hogg,et al.  Long-wavelength light emission and lasing from InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer , 2005 .

[21]  Andreas Stintz,et al.  2.0 μm wavelength InAs quantum dashes grown on a GaAs substrate using a metamorphic buffer layer , 2004 .

[22]  Y. Qiu,et al.  Self-assembled InAsSb quantum dots on (001) InP substrates , 2004 .

[23]  Yang-Fang Chen,et al.  Properties of photoluminescence in type-II GaAsSb/GaAs multiple quantum wells , 2002 .

[24]  H. Makino,et al.  Effect of lattice mismatch on surface morphology of InAs quantum dots on (100) In1−xAlxAs/InP , 2001 .

[25]  Yasuhiko Arakawa,et al.  Over 1.5 μm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition , 2001 .

[26]  J. Maserjian,et al.  Optically controlled absorption modulator based on state filling of InxGa1−xAs/GaAs quantum wells , 1989 .