论文信息 - Observation of quantum dot-like behavior of GaInNAs in GaInNAs/GaAs quantum wells

Observation of quantum dot-like behavior of GaInNAs in GaInNAs/GaAs quantum wells

We report a quantum dot-like behavior of GaInNAs due to composition nonuniformity of N and In in GaInNAs/GaAs quantum wells (QWs). Images of cross-sectional transmission electron microscopy show that the wells of both Ga0.7In0.3As/GaAs and Ga0.7In0.3N0.02As0.98/GaAs are undulated due to lateral variations in strain. This effect is more pronounced in the N-containing QWs due to nonuniform In and N concentrations. Rapid thermal annealing causes a blueshift of the photoluminescence (PL) peak, and results in a splitting of the as-grown broad PL emission into two peaks. The In and N composition fluctuation after annealing becomes predominantly bimodal. The low-energy PL peak is attributed to excitons localized at deep levels, which are originated from In- and N-rich regions in the wells acting as quantum dots (QD). The high-energy peak PH is likely due to the excitons of the 2D QWs. To reduce the local strain, N atoms are preferentially localized in the In-rich regions, so the separation between these two peak...

K. Kavanagh | C. Tu | H. Xin | Ziqiang Zhu

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