论文信息 - InAs-GaSb/Si heterojunction tunnel MOSFETs: An alternative to TFETs as energy-efficient switches?

InAs-GaSb/Si heterojunction tunnel MOSFETs: An alternative to TFETs as energy-efficient switches?

Double-gate ultra-thin-body (DGUTB) InAs-GaSb and InAs-Si gate-all-around nanowire (GAANW) tunnel MOS-FETs (TMOSFETs) with realistic dimensions are investigated in this paper. The former with an atomistic and full-band quantum transport solver based on the sp3s* tight-binding model, the latter with an effective mass approximation mode-space non-equilibrium Green's function tool. In the InAs-Si GAANW TMOSFETs, band-to-band tunneling is computed in a post-processing step using a rigorous analytical model that accounts for quantization effects. It is found that thicker devices are more promising regarding the ON-state current and low sub-threshold swing, e.g. Ion = 520μA/μm and SSav = 37.5 mV/dec for a InAs-GaSb DGUTB TMOSFET with thickness of 4 nm.

M. Luisier | A. Schenk | H. Carrillo-Nuñez

[1] Masamichi Yamanishi,et al. Comment on Polarization Dependent Momentum Matrix Elements in Quantum Well Lasers , 1984 .

[2] W. Fichtner,et al. Atomistic simulation of nanowires in the sp3d5s* tight-binding formalism: From boundary conditions to strain calculations , 2006 .

[3] W. Fichtner,et al. Quantum transport in two- and three-dimensional nanoscale transistors : Coupled mode effects in the nonequilibrium Green's function formalism , 2006 .

[4] Adrian M. Ionescu,et al. Tunnel field-effect transistors as energy-efficient electronic switches , 2011, Nature.

[5] S. Das,et al. Broken-Gap Tunnel MOSFET: A Constant-Slope Sub-60-mV/decade Transistor , 2011, IEEE Electron Device Letters.

[6] H. Riel,et al. InAs–Si Nanowire Heterojunction Tunnel FETs , 2012, IEEE Electron Device Letters.

[7] E. Lind,et al. High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors , 2013, IEEE Electron Device Letters.

[8] F. Peeters,et al. Phonon-assisted Zener tunneling in a cylindrical nanowire transistor , 2013 .

[9] Kaushik Roy,et al. GaSb-InAs n-TFET With Doped Source Underlap Exhibiting Low Subthreshold Swing at Sub-10-nm Gate-Lengths , 2014, IEEE Electron Device Letters.

[10] Mathieu Luisier,et al. Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices , 2015 .