论文信息 - Recent advances in telecommunication avalanche photodiodes with nano-sized multiplication region

Recent advances in telecommunication avalanche photodiodes with nano-sized multiplication region

This paper reviews the recent advances in telecommunication avalanche photodiodes with nano-sized multiplication region. A new low noise avalanche photodiode based on InP traditional material has been proposed for high speed optical communication.

[1] A. Tomita,et al. Efficient and low-noise single-photon avalanche photodiode for 1.244-GHz clocked quantum key distribution. , 2011, Optics express.

[2] S. Forrest,et al. In0.53Ga0.47As photodiodes with dark current limited by generation‐recombination and tunneling , 1980 .

[4] J. David,et al. A simple model to determine multiplication and noise in avalanche photodiodes , 1998 .

[5] Hideaki Matsuzaki,et al. 25-Gbit/s burst-mode optical receiver using high-speed avalanche photodiode for 100-Gbit/s optical packet switching. , 2014, Optics express.

[6] Majeed M. Hayat,et al. Time resolved gain and excess noise properties of InGaAs/InAlAs avalanche photodiodes with cascaded discrete gain layer multiplication regions , 2013 .

[7] M. Hopkinson,et al. Avalanche Multiplication in InAlAs , 2007, IEEE Transactions on Electron Devices.