Low-threshold oxide-confined GaInNAs long wavelength vertical cavity lasers
暂无分享,去创建一个
S. G. Spruytte | J.S. Harris | H. E. Petersen | M. Larson | C. Coldren | M.C. Larson | C.W. Coldren | S.G. Spruytte | H.E. Petersen | J. Harris
[1] James S. Harris,et al. Pulsed 25‒108°C operation of GalnNAs multiple quantum well vertical cavity lasers , 2000, CLEO 2000.
[2] Y. Osawa,et al. Room-temperature pulsed operation of 1.3 /spl mu/m GaInNAs/GaAs laser diode , 1997 .
[3] Kouji Nakahara,et al. GaInNAs: a novel material for long-wavelength semiconductor lasers , 1997 .
[4] K. Uomi,et al. GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes , 1998, IEEE Photonics Technology Letters.
[5] M. Kondow,et al. Photopumped lasing at 1.25 μm of GaInNAs-GaAs multiple-quantum-well vertical-cavity surface-emitting lasers , 1997, IEEE Photonics Technology Letters.
[6] M. Larson,et al. Room temperature continuous-wave photopumped operation of 1.22 /spl mu/m GaInNAs/GaAs single quantum well vertical cavity surface-emitting laser , 1997 .
[7] Michael C. Larson,et al. Pulsed 25-108/spl deg/C operation of GaInNAs multiple quantum well vertical cavity lasers , 2000, CLEO 2000.
[8] Martin R. Hofmann,et al. Ultrafast (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser for the 1.3 μm wavelength regime , 1999 .
[9] Michael C. Larson,et al. 1200 nm GaAs-based vertical cavity lasers employing GaInNAs multiquantum well active regions , 2000 .
[10] D. Deppe,et al. Native-Oxide Defined Ring Contact for Low Threshold Vertical-Cavity Lasers , 1994 .
[11] Larry A. Coldren,et al. Small efficient vertical cavity lasers with tapered oxide apertures , 1998 .