论文信息 - Device effects and charging damage: correlations between SPIDER-MEM and CHARM/sup R/-2

Device effects and charging damage: correlations between SPIDER-MEM and CHARM/sup R/-2

The reasons underlying correlations and lack of correlations between SPIDER-MEM and CHARM-2 wafer results are investigated for wafers implanted in a high-current, low energy ion implanter equipped with a plasma charge-control system. The results can be explained by taking into account the device structure and physics of the SPIDER-MEM devices, and the charging characteristics of the implanter. The work has important implications for comparisons of results obtained from charging monitors and damage monitors.

W. Lukaszek | M. J. Rendon | D. E. Dyer

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