论文信息 - 1.3 [micro sign]m GaAs-based laser using quantum dots obtained by activated spinodal decomposition

1.3 [micro sign]m GaAs-based laser using quantum dots obtained by activated spinodal decomposition

Low threshold current density (J/sub th/=65 A/cm/sup 2/) operation near 1.3 /spl mu/m at room temperature (RT) is realised for lasers using InAs-InGaAs-GaAs quantum dots (QDs). The lasing occurs via the QD ground state for cavity length L>1 mm. The differential efficiency is 40% and internal losses are 1.5 cm. The characteristic temperature near RT is 160 K.

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