Effects of Ion Species on SEB Failure Voltage of Power DMOSFET

This paper presents and explains test results showing the effect of ion species on the single event burnout (SEB) failure voltage using a SEB sensitive engineering power double diffused metal oxide silicon field effect transistor (DMOSFET). The analyses show the determining factor of tested SEB failure voltage is the ion species itself rather than test or beam conditions such as initial beam energy, surface linear energy transfer (LET), ion range, or ionized charge. Also, results from five test facilities and five test setups are compared to determine if there will be differences in test results when different test setups or different heavy ion accelerator facilities were used.