Convection model for growth and dissolution of ternary alloys by liquid phase epitaxy

[1]  Sadik Dost,et al.  A solid-liquid diffusion model for growth and dissolution of ternary alloys by liquid phase epitaxy , 1996 .

[2]  B. Tabarrok,et al.  A model for liquid phase electroepitaxy under an external magnetic field II. Application , 1995 .

[3]  Z. Zytkiewicz Liquid phase electroepitaxial growth of thick and compositionally uniform AlGaAs layers on GaAs substrates , 1995 .

[4]  N. Djilali,et al.  Convective transport and interface kinetics in liquid phase epitaxy , 1994 .

[5]  N. Djilali,et al.  Investigation of solutal convection during the dissolution of silicon in a sandwich system , 1993 .

[6]  Z. Zytkiewicz Influence of convection on the composition profiles of thick GaAlAs layers grown by liquid phase electroepitaxy , 1993 .

[7]  T. Bryśkiewicz,et al.  Growth of alloy substrates by liquid phase electroepitaxy; theoretical considerations , 1993 .

[8]  K. Benz,et al.  Growth of AlxGa1−xSb and GaSb bulk crystals with liquid phase electro-epitaxy (LPEE) , 1993 .

[9]  S. Miotkowska,et al.  Compositional control of thick Ga1 - xAl ϰ As layers (x≤0.72) grown by liquid phase electroepitaxy , 1992 .

[10]  K. Hiramatsu,et al.  Growth of InGaP epitaxial layers by liquid phase electro-epitaxy , 1991 .

[11]  K. Nakajima Calculation of composition variation of In1−vGavAs ternary crystals for diffusion and electromigration limited growth from a temperature graded solution with source material , 1991 .

[12]  A. Tanaka,et al.  Growth of a GeSi thick alloy layer on a Si substrate by liquid phase epitaxy , 1991 .

[13]  Z. Wasilewski,et al.  Properties of very uniform InxGa1−xAs single crystals grown by liquid‐phase electroepitaxy , 1990 .

[14]  A. Tanaka,et al.  Gravity effect on solute transport in dissolution and growth of silicon , 1990 .

[15]  A. Tanaka,et al.  Gravity effect on dissolution and growth of silicon in the In-Si system , 1988 .

[16]  K. Nakajima Liquid‐phase epitaxial growth of very thick In1−xGaxAs layers with uniform composition by source‐current‐controlled method , 1987 .

[17]  M. Small,et al.  Growth and dissolution kinetics of ternary III‐V heterostructures formed by liquid phase epitaxy. III. Effects of temperature programming , 1982 .

[18]  J. Daniele,et al.  Peltier‐induced liquid phase epitaxy and compositional control of mm‐thick layers of (Al,Ga)As , 1981 .

[19]  M. Small,et al.  Growth and dissolution kinetics of III‐V heterostructures formed by LPE , 1979 .

[20]  J. Daniele Peltier‐induced LPE and composition stabilization of GaAlAs , 1975 .

[21]  M. Panish,et al.  Phase equilibria in ternary III–V systems , 1972 .