An efficient approach to noise analysis through multidimensional physics-based models

The paper presents a general approach to numerically simulate the noise behavior of bipolar solid-state electron devices through a physics-based multidimensional device model. The proposed technique accounts for noise sources due to carrier velocity and population fluctuations. The power and correlation spectra of the external current or voltage fluctuations are evaluated through a Green's function, linear perturbation theory equivalent to the classical Impedance Field Method for noise analysis and its generalizations. The numerical implementation of the method is performed through an efficient technique, which allows noise analysis to be carried out with negligible overhead with respect to the small-signal simulation. Some case studies are analyzed in order to compare the present approach with theoretical results from the classical noise theory of p-n junctions and bipolar transistors.

[1]  Kazimierz Sobczyk,et al.  Stochastic Differential Equations , 1991 .

[2]  Hermann A. Haus,et al.  Noise characteristics of gallium arsenide field-effect transistors , 1974 .

[3]  T. C. McGill,et al.  Equivalence of the Langevin method and the impedance-field method of calculating noise in devices , 1974 .

[4]  K. M. van Vliet,et al.  General transport theory of noise in pn junction-like devices—I. Three-dimensional Green's function formulation , 1972 .

[5]  Randolph E. Bank,et al.  Numerical Methods for Semiconductor Device Simulation , 1983 .

[6]  Fabrizio Bonani,et al.  A general framework for the noise analysis of semiconductor devices operating in nonlinear (large-signal quasi-periodic) conditions , 1997 .

[7]  William Shockley,et al.  The Impedance Field Method of Noise Calculation in Active Semiconductor Devices , 1966 .

[8]  Fabrizio Bonani,et al.  A novel implementation of noise analysis in general-purpose PDE-based semiconductor device simulators , 1995, Proceedings of International Electron Devices Meeting.

[9]  C. V. Vliet,et al.  Macroscopic and microscopic methods for noise in devices , 1994 .

[10]  W. Fichtner,et al.  Numerical methods for semiconductor device simulation , 1983, IEEE Transactions on Electron Devices.

[11]  K. M. V. Vliet.  Markov Approach to Density Fluctuations Due to Transport and Scattering. I. Mathematical Formalism , 1971 .

[12]  Giovanni Ghione,et al.  A computationally efficient unified approach to the numerical analysis of the sensitivity and noise of semiconductor devices , 1993, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[13]  Mark R. Pinto,et al.  ULSI technology development by predictive simulations , 1993, Proceedings of IEEE International Electron Devices Meeting.

[14]  J. Nougier.  Fluctuations and noise of hot carriers in semiconductor materials and devices , 1994 .

[15]  Jr. F. Branin,et al.  Network sensitivity and noise analysis simplified , 1973 .