Issues in NiSi-gated FDSOI device integration
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Ying Zhang | M. Steen | Meikei Ieong | W. Haensch | J. Kedzierski | F.F. Jamin | D. Boyd | J. Benedict
[1] Ming Qin,et al. Investigation of Polycrystalline Nickel Silicide Films as a Gate Material , 2001 .