论文信息 - Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy - 字舞流文

Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy

D. Jena | H. Xing | O. Brandt | J. Encomendero | J. Lahnemann | Y. Cho | Celesta L. Chang | Len van Deurzen | D. A. Muller | N. Pieczulewski | J. Singhal