The defect-centric perspective of device and circuit reliability—From gate oxide defects to circuits

Abstract As-fabricated (time-zero) variability and mean device aging are nowadays routinely considered in circuit simulations and design. Time-dependent variability (reliability-related variability) is an emerging concern that needs to be considered in circuit design as well. This phenomenon in deeply scaled devices can be best understood within the so-called defect-centric picture in terms of an ensemble of individual defects. The properties of gate oxide defects are discussed. It is further shown how in particular the electrical properties can be used to construct time-dependent variability distributions and can be propagated up to transistor-level circuits.

[1]  Rihito Kuroda,et al.  A Statistical Evaluation of Random Telegraph Noise of In-Pixel Source Follower Equivalent Surface and Buried Channel Transistors , 2013, IEEE Transactions on Electron Devices.

[2]  G. Groeseneken,et al.  From mean values to distributions of BTI lifetime of deeply scaled FETs through atomistic understanding of the degradation , 2011, 2011 Symposium on VLSI Technology - Digest of Technical Papers.

[3]  Kazutoshi Kobayashi,et al.  The impact of RTN on performance fluctuation in CMOS logic circuits , 2011, 2011 International Reliability Physics Symposium.

[4]  M. A. Pourghaderi,et al.  RTN and PBTI-induced time-dependent variability of replacement metal-gate high-k InGaAs FinFETs , 2014, 2014 IEEE International Electron Devices Meeting.

[5]  K. Takeuchi,et al.  Statistical characterization of trap position, energy, amplitude and time constants by RTN measurement of multiple individual traps , 2010, 2010 International Electron Devices Meeting.

[6]  Gilles Reimbold,et al.  A Complete Characterization and Modeling of the BTI-Induced Dynamic Variability of SRAM Arrays in 28-nm FD-SOI Technology , 2014, IEEE Transactions on Electron Devices.

[7]  G. Groeseneken,et al.  Defect-centric perspective of combined BTI and RTN time-dependent variability , 2015, 2015 IEEE International Integrated Reliability Workshop (IIRW).

[8]  B. Kaczer,et al.  Physical modeling of NBTI: From individual defects to devices , 2014, 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

[9]  Purushothaman Srinivasan,et al.  Impact of Stress Mode on Stochastic BTI in Scaled MG/HK CMOS Devices , 2014, IEEE Electron Device Letters.

[10]  Diederik Verkest,et al.  Smart-array for pipelined BTI characterization , 2015, 2015 IEEE International Integrated Reliability Workshop (IIRW).

[11]  Tibor Grasser,et al.  Depth localization of positive charge trapped in silicon oxynitride field effect transistors after positive and negative gate bias temperature stress , 2011 .

[12]  M. D. Giles,et al.  Process Technology Variation , 2011, IEEE Transactions on Electron Devices.

[13]  G. Ghibaudo,et al.  Characterization and Modeling of Transistor Variability in Advanced CMOS Technologies , 2011, IEEE Transactions on Electron Devices.

[14]  A. Shluger,et al.  Nature of intrinsic and extrinsic electron trapping in SiO2 , 2014 .

[15]  J. Martin-Martinez,et al.  RELAB: A tool to include MOSFETs BTI and variability in SPICE simulators , 2012, 2012 International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD).

[16]  A. Veloso,et al.  Insights in low frequency noise of advanced and high-mobility channel transistors , 2012, 2012 International Electron Devices Meeting.

[17]  Yu Cao,et al.  The Impact of NBTI Effect on Combinational Circuit: Modeling, Simulation, and Analysis , 2010, IEEE Transactions on Very Large Scale Integration (VLSI) Systems.

[18]  Liesbet Van der Perre,et al.  Degradation analysis of datapath logic subblocks under NBTI aging in FinFET technology , 2014, Fifteenth International Symposium on Quality Electronic Design.

[19]  M. Nelhiebel,et al.  The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps , 2011, IEEE Transactions on Electron Devices.

[20]  Rudy Lauwereins,et al.  NBTI Aging on 32-Bit Adders in the Downscaling Planar FET Technology Nodes , 2014, 2014 17th Euromicro Conference on Digital System Design.

[21]  B. Kaczer,et al.  Degradation of time dependent variability due to interface state generation , 2013, 2013 Symposium on VLSI Technology.

[22]  Francky Catthoor,et al.  Atomistic Pseudo-Transient BTI Simulation With Inherent Workload Memory , 2014, IEEE Transactions on Device and Materials Reliability.

[23]  T. Grasser,et al.  Understanding correlated drain and gate current fluctuations , 2013, Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).

[24]  Sébastien Haendler,et al.  New LFN and RTN analysis methodology in 28 and 14nm FD-SOI MOSFETs , 2015, 2015 IEEE International Reliability Physics Symposium.

[25]  R. Degraeve,et al.  Correlation of single trapping and detrapping effects in drain and gate currents of nanoscaled nFETs and pFETs , 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).

[26]  Francky Catthoor,et al.  The defect-centric perspective of device and circuit reliability — From individual defects to circuits , 2015, 2015 45th European Solid State Device Research Conference (ESSDERC).

[27]  K. Takeuchi,et al.  New analysis methods for comprehensive understanding of Random Telegraph Noise , 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

[28]  G. Groeseneken,et al.  Maximizing reliable performance of advanced CMOS circuits—A case study , 2014, 2014 IEEE International Reliability Physics Symposium.

[29]  Naoto Horiguchi,et al.  Channel Hot Carrier Degradation Mechanism in Long/Short Channel $n$-FinFETs , 2013, IEEE Transactions on Electron Devices.

[30]  Christoph Sohrmann,et al.  NBTI modeling in analog circuits and its application to long-term aging simulations , 2014, 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW).

[31]  B. Kaczer,et al.  An energy-level perspective of bias temperature instability , 2008, 2008 IEEE International Reliability Physics Symposium.

[32]  M.J.M. Pelgrom,et al.  Matching properties of MOS transistors , 1989 .

[33]  Dimitri Linten,et al.  Comparative experimental analysis of time-dependent variability using a transistor test array , 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

[34]  M. Kobayashi,et al.  Statistical measurement of random telegraph noise and its impact in scaled-down high-κ/metal-gate MOSFETs , 2012, 2012 International Electron Devices Meeting.

[35]  A. Visconti,et al.  Comprehensive Analysis of Random Telegraph Noise Instability and Its Scaling in Deca–Nanometer Flash Memories , 2009, IEEE Transactions on Electron Devices.

[36]  N. Horiguchi,et al.  Interplay Between Statistical Variability and Reliability in Contemporary pMOSFETs: Measurements Versus Simulations , 2014, IEEE Transactions on Electron Devices.

[37]  T. Grasser,et al.  Hydrogen-induced rupture of strained Si─O bonds in amorphous silicon dioxide. , 2015, Physical review letters.

[38]  K. Sonoda,et al.  Discrete Dopant Effects on Statistical Variation of Random Telegraph Signal Magnitude , 2007, IEEE Transactions on Electron Devices.

[39]  R. Howard,et al.  Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency ( 1 f ?) Noise , 1984 .

[40]  J.P. Campbell,et al.  Random telegraph noise in highly scaled nMOSFETs , 2009, 2009 IEEE International Reliability Physics Symposium.

[41]  T. Grasser,et al.  On the microscopic structure of hole traps in pMOSFETs , 2014, 2014 IEEE International Electron Devices Meeting.

[42]  Gilles Reimbold,et al.  Modeling the Dynamic Variability Induced by Charged Traps in a Bilayer Gate Oxide , 2015, IEEE Transactions on Electron Devices.

[43]  Jacopo Franco,et al.  Statistical Distribution of Defect Parameters , 2014 .

[44]  Francky Catthoor,et al.  Bias Temperature Instability analysis of FinFET based SRAM cells , 2014, 2014 Design, Automation & Test in Europe Conference & Exhibition (DATE).

[45]  G. Groeseneken,et al.  Atomistic approach to variability of bias-temperature instability in circuit simulations , 2011, 2011 International Reliability Physics Symposium.

[46]  Naoto Horiguchi,et al.  Origins and implications of increased channel hot carrier variability in nFinFETs , 2015, 2015 IEEE International Reliability Physics Symposium.

[47]  S. Mahapatra,et al.  Impact of time-zero and NBTI variability on sub-20nm FinFET based SRAM at low voltages , 2015, 2015 IEEE International Reliability Physics Symposium.

[48]  T. Grasser,et al.  Statistics of Multiple Trapped Charges in the Gate Oxide of Deeply Scaled MOSFET Devices—Application to NBTI , 2010, IEEE Electron Device Letters.

[49]  T. Grasser,et al.  The statistical analysis of individual defects constituting NBTI and its implications for modeling DC- and AC-stress , 2010, 2010 IEEE International Reliability Physics Symposium.

[50]  N. Horiguchi,et al.  Study of (correlated) trap sites in SILC, BTI and RTN in SiON and HKMG devices , 2014, Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).

[51]  Jie Ding,et al.  Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: A review , 2014, Microelectronics and reliability.

[52]  G. Groeseneken,et al.  Non-Monte-Carlo methodology for high-sigma simulations of circuits under workload-dependent BTI degradation—Application to 6T SRAM , 2014, 2014 IEEE International Reliability Physics Symposium.

[53]  T. Nigam,et al.  Challenges in the characterization and modeling of BTI induced variability in metal gate / High-k CMOS technologies , 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

[54]  Naoto Horiguchi,et al.  Extraction of the Random Component of Time-Dependent Variability Using Matched Pairs , 2015, IEEE Electron Device Letters.

[55]  Heather Quinn,et al.  2015 Special Issue of the IEEE Transactions on Nuclear Science Modeling and Simulation of Radiation Effects Editor Comments , 2015 .

[56]  Felice Crupi,et al.  Defect-Centric Distribution of Channel Hot Carrier Degradation in Nano-MOSFETs , 2014, IEEE Electron Device Letters.

[57]  Andreas Kerber.  Methodology for Determination of Process Induced BTI Variability in MG/HK CMOS Technologies Using a Novel Matrix Test Structure , 2014, IEEE Electron Device Letters.

[58]  T. Grasser,et al.  Reduction of the BTI time-dependent variability in nanoscaled MOSFETs by body bias , 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

[59]  T. Grasser,et al.  SiGe Channel Technology: Superior Reliability Toward Ultra-Thin EOT Devices—Part II: Time-Dependent Variability in Nanoscaled Devices and Other Reliability Issues , 2013, IEEE Transactions on Electron Devices.

[60]  T. Hiramoto,et al.  Analysis of transistor characteristics in distribution tails beyond ±5.4σ of 11 billion transistors , 2013, 2013 IEEE International Electron Devices Meeting.

[61]  B. Parvais,et al.  Advanced MOSFET variability and reliability characterization array , 2015, 2015 IEEE International Integrated Reliability Workshop (IIRW).

[62]  Ralf Brederlow,et al.  Statistical model for MOSFET low-frequency noise under cyclo-stationary conditions , 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

[63]  Guido Groeseneken,et al.  Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study , 2002, Microelectron. Reliab..

[64]  B. Kaczer,et al.  Analytic modeling of the bias temperature instability using capture/emission time maps , 2011, 2011 International Electron Devices Meeting.

[65]  Gennadi Bersuker,et al.  PBTI-Induced Random Timing Jitter in Circuit-Speed Random Logic , 2014, IEEE Transactions on Electron Devices.

[66]  Guido Groeseneken,et al.  A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides , 1995, Proceedings of International Electron Devices Meeting.

[67]  T. Grasser,et al.  Advanced characterization of oxide traps: The dynamic time-dependent defect spectroscopy , 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

[68]  Francky Catthoor,et al.  Implications of BTI-Induced Time-Dependent Statistics on Yield Estimation of Digital Circuits , 2014, IEEE Transactions on Electron Devices.

[69]  Tibor Grasser,et al.  On the volatility of oxide defects: Activation, deactivation, and transformation , 2015, 2015 IEEE International Reliability Physics Symposium.

[70]  Francky Catthoor,et al.  Characterization of time-dependent variability using 32k transistor arrays in an advanced HK/MG technology , 2015, 2015 IEEE International Reliability Physics Symposium.

[71]  C. Fiegna,et al.  Impact of Hot Carriers on nMOSFET Variability in 45- and 65-nm CMOS Technologies , 2011, IEEE Transactions on Electron Devices.

[72]  N. Horiguchi,et al.  Impact of single charged gate oxide defects on the performance and scaling of nanoscaled FETs , 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).

[73]  T. Grasser,et al.  The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability , 2010, 2010 IEEE International Reliability Physics Symposium.

[74]  X. Federspiel,et al.  BTI variability fundamental understandings and impact on digital logic by the use of extensive dataset , 2013, 2013 IEEE International Electron Devices Meeting.

[75]  Philippe Roussel,et al.  Accurate reliability evaluation of non-uniform ultrathin oxynitride and high-k layers , 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..

[76]  T. Grasser,et al.  Advanced modeling of charge trapping: RTN, 1/f noise, SILC, and BTI , 2014, 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

[77]  V. Huard,et al.  NBTI degradation: From transistor to SRAM arrays , 2008, 2008 IEEE International Reliability Physics Symposium.

[78]  R. Degraeve,et al.  Review of reliability issues in high-k/metal gate stacks , 2008, 2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits.

[79]  R. Degraeve,et al.  Origin of NBTI variability in deeply scaled pFETs , 2010, 2010 IEEE International Reliability Physics Symposium.

[80]  M. J. Kirton,et al.  Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise , 1989 .

[81]  Marcel J. M. Pelgrom,et al.  Matching properties of MOS transistors , 1989 .

[82]  Domenik Helms,et al.  Efficient NBTI modeling technique considering recovery effects , 2014, 2014 IEEE/ACM International Symposium on Low Power Electronics and Design (ISLPED).

[83]  T. Grasser,et al.  Microscopic oxide defects causing BTI, RTN, and SILC on high-k FinFETs , 2015, 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

[84]  T. Grasser,et al.  Defect-based methodology for workload-dependent circuit lifetime projections - Application to SRAM , 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

[85]  Guido Groeseneken,et al.  Design and simulation of on-chip circuits for parallel characterization of ultrascaled transistors for BTI reliability , 2014, 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW).

[86]  Diederik Verkest,et al.  Characterization and simulation methodology for time-dependent variability in advanced technologies , 2015, 2015 IEEE Custom Integrated Circuits Conference (CICC).